Fairchild FDP8860 service manual

tm

FDP8860

s

N-Channel PowerTrench® MOSFET

30V, 80A, 2.5mΩ

Features

 Max r

 Max r

 Low Miller Charge

 Low Qrr Body Diode

 UIL Capability (Single Pulse and Repetitive Pulse)

 RoHS Compliant

= 2.5mΩ at VGS = 10V, ID = 80A

DS(on)

= 2.9mΩ at VGS = 4.5V, ID = 80A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
switching speed.

Application

 DC - DC Conversion

 Start / Alternator Sytems

D

September 2006

and fast

DS(on)

FDP8860 N-Channel PowerTrench

®

MOSFET

G

G

D

S

TO-220

FDP Serie

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP8860 FDP8860 TO220AB Tube N/A 50 units

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25°C 80

-Pulsed (Note 1) 556

Single Pulse Avalanche Energy (Note 2) 673 mJ

Power Dissipation 254 W

Operating and Storage Temperature -55 to +175 °C

Thermal Resistance, Junction to Case TO220 0.59

Thermal Resistance, Junction to Ambient TO220 62

= 25°C unless otherwise noted

C

= 25°C 219

C

A -Continuous (Silicon limited) T

°C/W

©2006 Fairchild Semiconductor Corporation
FDP8860 Rev.B

1

www.fairchildsemi.com

FDP8860 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

ID = 1mA, referenced to 25°C 22 mV/°C

VDS = 24V, 1

V

= 0V TJ = 150°C 250

GS

Gate to Source Leakage Current VGS = ±20V ±100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.6 2.5 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 80A 3.4 S

ID = 250µA, referenced to 25°C -9.6 mV/°C

VGS = 10V, ID = 80A 1.9 2.5

VGS = 5V, ID = 80A 2.0 2.8

VGS = 4.5V, ID = 80A 2.1 2.9

VGS = 10V, ID = 80A, TJ = 150°C 2.9 3.8

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 1700 2260 pF

Reverse Transfer Capacitance 1060 1590 pF

VDS = 15V, VGS = 0V,
f = 1MHz

9200 12240 pF

Gate Resistance f = 1MHz 1.7 Ω

µA

®

MOSFET

mΩ

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(5)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 135 216 ns

Turn-Off Delay Time 64 103 ns

Fall Time 59 95 ns

Total Gate Charge at 10V V

Total Gate Charge at 5V V

Gate to Source Gate Charge 27 nC

Gate to Drain “Miller” Charge 33 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: Pulse Test: Pulse Width < 80µs, Duty cycle < 0.5%.
2: Starting T

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 74 111 nC

=25oC, L= 0.3mH, IAS = 67A,VDD = 27V, VGS = 10V.

J

VDD = 15V, ID = 80A
VGS = 5V, R

= 0V to 10V

GS

= 0V to 5V 81 11 4 nC

GS

V

= 0V, IS = 80A 0.88 1.25

GS

V

= 0V, IS = 40A 0.81 1.2

GS

GEN

= 3Ω

VDD = 15V
ID = 80A

IF = 80A, di/dt = 100A/µs

35 56 ns

158 222 nC

60 90 ns

V

FDP8860 Rev.B

2

www.fairchildsemi.com