Fairchild FDP8447L service manual

tm

FDP8447L

N-Channel PowerTrench® MOSFET

40V, 50A, 8.7mΩ

Features

 Max r
 Max r
 Fast Switching
 RoHS Compliant

= 8.7mΩ at VGS = 10V, ID = 14A

DS(on)

= 11.2mΩ at VGS = 4.5V, ID = 11A

DS(on)

General Description

This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench technology to deliver
low

r

and optimized BV

DS(on)

performance benefit in the application.

Applications

 Inverter
 Power Supplies

May 2007

capability to offer superior

DSS

D

FDP8447L N-Channel PowerTrench

®

MOSFET

G

D

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100
Drain-Source Avalanche Energy (Note 3) 153 mJ
Power Dissipation TC = 25°C 60
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

TO-220

FDP Series

= 25°C 65

C

= 25°C (Note 1) 12

A

= 25°C (Note 1) 2

A

G

S

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 2.1
Thermal Resistance, Junction to Ambient (Note 1) 62.5

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDP8447L FDP8447L TO-220AB Tube N/A 50units

©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B

1

www.fairchildsemi.com

FDP8447L N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
Breakdown Voltage Temperature

Coefficient

ID = 250µA, referenced to 25°C 34 mV/°C

Zero Gate Voltage Drain Current VDS = 32V, 1 µA
Gate to Source Leakage Current VGS = ±20V, V

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.7 3 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5V, ID = 14A 74 S

ID = 250µA, referenced to 25°C -6 mV/°C
VGS = 10V, ID = 14A 7.7 8.7

VGS = 10V, ID = 14A, TJ = 125°C 12.1 13.7

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 245 325 pF
Reverse Transfer Capacitance 150 225 pF

VDS = 20V, VGS = 0V,
f = 1MHz

1880 2500 pF

Gate Resistance f = 1MHz 1.4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 7 14 ns
Turn-Off Delay Time 28 45 ns

VDD = 20V, ID = 14A,
VGS = 10V, R

GEN

= 6Ω

9 18 ns

Fall Time 4 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 4.7 nC

= 0V to 10V

GS

= 0V to 5V 19 27 nC

GS

VDD = 20V,
ID = 14A

35 49 nC

Gate to Drain “Miller” Charge 6.2 nC

mΩVGS = 4.5V, ID = 11A 8.9 11.2

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case -to- ambient thermal resistance where the case thermal reference is defined as the s olde r m ount i ng sur f ace o f the dr a in pi n s .

θJA

is guaranteed by design while R

R

θJC

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting T

©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 22 33 nC

is determined by the user’s board design.

θJA

= 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, V

J

GS

= 10V.

= 0V, IS = 14A (Note 2) 0.8 1.2 V

GS

IF = 14A, di/dt = 100A/µs

2

28 42 ns

www.fairchildsemi.com