Fairchild FDP80N06 service manual

tm

FDP80N06

N-Channel MOSFET

60V, 80A, 10mΩ

FDP80N06 N-Channel MOSFET

September 2007

TM

UniFET

Features

•R

• Low gate charge(Typ. 57nC)

• Low C

• Fast switching

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A

DS(on)

(Typ. 145pF)

rss

S

G

D

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V

D r a i n C urrent
Drain Current - Pulsed (Note 1) 320 A

Single Pulsed Avalanche Energy (Note 2) 480 mJ
Avalanche Current (Note 1) 80 A
Repetitive Avalanche Energy (Note 1) 17.6 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220

o

= 25

C unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 176 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
correction, electronic lamp ballast based on half bridge topology.

D

G

S

= 25oC) 80

C

= 100oC) 65

C

o

C1.17W/

300

o

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.85
Thermal Resistance, Junction to Ambient 62.5

o

C/W

A

o

C

C
C

©2007 Fairchild Semiconductor Corporation
FDP80N06 Rev. A

www.fairchildsemi.com1

FDP80N06 N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP80N06 FDP80N06 TO-220 - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC60 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC - 0.075 - V/oC

D

V

= 60V, V

DS

= 48V, TC = 150oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.0--4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 40A - 8.5 10 mΩ
Forward Transconductance VDS = 25V , ID = 40A (Note 4) -67-S

Input Capacitance
Output Capacitance - 910 1190 pF
Reverse Transfer Capacitance - 145 190 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

- 2450 3190 pF

µA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g(tot)
gs
gd

Turn-On Delay Time
Turn-On Rise Time - 259 528 ns
Turn-Off Delay Time - 136 282 ns
Turn-Off Fall Time - 113 236 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 15 - nC
Gate to Drain “Miller” Charge - 24 - nC

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.15mH, I

≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BV

3: I

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 80 A
Maximum Pulsed Drain to Source Diode Forward Current - - 320 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 127 - nC

= 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 30V, ID = 80A

V

DD

R

= 25Ω

G

(Note 4, 5)

V

= 48V, ID = 80A

DS

V

= 10V

GS

GS

V

GS

dI

/dt = 100A/µs (Note 4)

F

(Note 4, 5)

= 0V, I

= 0V, I

= 80A - - 1.4 V

SD

= 80A

SD

-3275ns

-5774nC

-64-ns

FDP80N06 Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

400

V

= 10.0 V

GS

8.0 V

7.0 V

100

6.5 V

6.0 V

5.5 V

5.0 V

10

,Drain Current[A]

D

I

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

0.4

1

0.02

0.1 1 10

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.03

500

*Notes:

1. V

= 20V

DS

2. 250

µs Pulse Test

100

175oC

10

,Drain Current[A]

D

I

1

0246810

-55oC

25oC

VGS,Gate-Source Voltage[V]

500

FDP80N06 N-Channel MOSFET

100

0.02

[Ω],

DS(ON)

R

0.01

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0.00
0 80 160 240 320

*Note: TJ = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

1

0.0 0.5 1.0 1.5 2.0

175oC

25oC

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

VSD, Body Diode Forward Voltage [V ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitances [pF]

6000

4500

3000

1500

C

= Cgs + Cgd (Cds = shorted)

C

iss

C

oss

iss

C

oss

C

rss

= Cds + C

= C

gd

gd

*Note:

1. V

2. f = 1MH z

= 0V

GS

C

rss

, Gate-Source Voltage [V]

GS

V

10

VDS = 15V

= 30V

V

8

DS

V

= 48V

DS

6

4

2

0

FDP80N06 Rev. A

0.1 1 10
VDS, Drain-Source Voltage [V ]

30

0

015304560

*Note: ID = 80A

Qg, Total G a te C harge [n C]

3

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