Fairchild FDP8030L, FDB8030L service manual
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FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench MOSFET
FDP8030L/FDB8030L
November 1999
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall effici ency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
specifications.
R
DS(on)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
G
G
D
S
TO-220
FDP Series
S
Features
80 A, 30 V. R
•
Critical DC electrical parameters specified at
•
elevated temperature
Rugged internal source-drain diode can eliminate the
•
need for an external Zener diode transient
suppressor
High performance trench technology for extremely
•
low R
DS(ON)
175°C maximum junction temperature rating
•
D
= 0.0035 Ω @ VGS = 10 V
DS(ON)
= 0.0045 Ω @ VGS = 4.5 V
R
DS(ON)
G
D
TO-263AB
FDB Series
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
T
L
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Total Power Dissipation @# TC = 25°C
Derate above 25°C
(Note 1)
(Note 1)
20
±
80 A
300
187 W
1.25
W°C
Operating and Storage Junction Temperature Range -65 to +175
Maximum lead temperature for soldering purposes,
275
1/8” from case for 5 seconds
Thermal Characteristics
R
JC
θ
R
JA
θ
1999 Fairchild Semiconductor Corpor ation
Thermal Resistance, Junction-to-Case 0.8
Thermal Resistance, Junction-to-Ambient 62.5
°
°
FDP8030L Rev C(W)
V
C
°
C
°
C/W
C/W
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 1)
VDD = 20 V, ID = 80 A 1500 mJ
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
= 24 V, VGS = 0 V 10
V
DS
= 20 V, VDS = 0 V 100 nA
V
GS
= –20 V VDS = 0 V –100 nA
V
GS
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 80 A
=125°C
T
J
V
= 4.5 V, ID = 70 A 3.6 4.5
GS
= 10 V, VDS = 10 V 60 A
V
GS
= 10 V, ID = 80 A 170 S
V
DS
V
= 15 V, V
DS
GS
= 0 V,
f = 1.0 MHz
30 V
23
11.52 V
–5
3.1
4.0
10500 pF
2700 pF
1650 pF
80 A
mV/°C
mV/°C
3.5
5.6
A
µ
m
Ω
Switching Characteristics
t
D(on)
t
r
t
D (off)
t
f
Q
Q
Q
g
gs
gd
Turn–On Delay Time 20 35 ns
Turn–On Rise Time 185 225 ns
Turn–Off Delay Time 160 200 ns
Turn–Off Fall Time
Total Gate Charge 120 170 nC
Gate–Source Charge 27 nC
Gate–Drain Charge
(Note 2)
= 15 V, ID = 50 A,
V
DD
= 4.5 V, R
V
GS
= 10
R
V
I
D
Ω
GS
= 15 V,
DS
= 80 A, VGS = 5 V
GEN
Drain–Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
Notes:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
1.
Maximum Continuous Drain–Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain–Source Diode Forward Voltage VGS = 0 V, IS = 80 A
= 10
(Note 1)
(Note 1)
(Note 1)
Ω
200 240 ns
48 nC
80 A
300 A
11.3 V
FDP8030L Rev C(W)
Typical Characteristics
FDP8030L/FDB8030L
100
4.5V
80
3.5V
60
40
3.0V
2.5V
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
3
V = 2.5V
2.5
GS
2
1.5
DS(ON)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 20406080100120
3.0V
3.5V
4.5V
I , DRAIN CURRENT (A)
D
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
I = 80A
D
V = 10V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
, ON-RESISTANCE (OHM)
0.002
DS(ON)
R
0.001
0
2345678
V
, GATE TO SOURCE VOLT AGE ( V )
GS
TA = 125oC
TA = 25oC
10V
ID = 40A
Figure 3. On-Resistance Variation with
Temperature.
60
V = 10V
DS
50
40
T = -55°C
30
20
D
I , DRAIN CURRENT (A)
10
0
1234
A
25°C
125°C
V , GATE T O SOURCE VOLTAGE (V)
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
10
T = 125°C
1
0.1
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
A
25°C
-55°C
V , BODY DIODE FORWARD VOLTAG E (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
V = 0V
GS
FDP8030L Rev C(W)
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