September 2010
TO-220
FDP Series
G D S
TO-220F
FDPF Series
(potted)
G
S
D
UniFET-II
FDP7N60NZ / FDPF7N60NZ
N-Channel MOSFET
600V, 6.5A, 1.25
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
TM
Features
•R
• Low gate charge ( Typ. 13nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
• RoHS compliant
MOSFET Maximum Ratings T
Symbol Parameter FDP7N60NZ
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A
DS(on)
( Typ. 7pF)
rss
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 26 26* A
Single Pulsed Avalanche Energy (Note 2) 275 mJ
Avalanche Current (Note 1) 6.5 A
Repetitive Avalanche Energy (Note 1) 14.7 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 147 33 W
C
- Derate above 25
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
FDPF7N60NZ
= 25oC) 6.5 6.5*
C
= 100oC) 3.9 3.9*
C
o
C 1.2 0.26 W/oC
300
Units
o
o
Thermal Characteristics
Symbol Parameter FDP7N60NZ FDPF7N60NZ Units
R
JC
CS
R
JA
Thermal Resistance, Junction to Case 0.85 3.8
Thermal Resistance, Case to Sink Typ. 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5
o
C/WR
A
C
C
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. A
www.fairchildsemi.com1
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP7N60NZ FDP7N60NZ TO-220 - - 50
FDPF7N60NZ FDPF7N60NZ TO-220F - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250A, Referenced to 25oC-0.6-V/
D
V
= 600V, V
DS
= 480V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±10 A
DS
Gate Threshold Voltage VGS = VDS, ID = 250A3-5V
Static Drain to Source On Resistance VGS = 10V, ID = 3.25A - 1.05 1.25
Forward Transconductance VDS = 20V, ID = 3.25A (Note 4) -7.3-S
Input Capacitance
Output Capacitance - 70 90 pF
Reverse Transfer Capacitance - 7 10 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 480V, ID = 6.5A
Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5.6 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 550 730 pF
-1317nC
A
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 30 70 ns
Turn-Off Delay Time - 40 90 ns
Turn-Off Fall Time - 25 60 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =13mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 6.5A, di/dt 200A/s, VDD BV
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 6.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 26 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.4 - C
, Starting TJ = 25°C
DSS
= 300V, ID = 6.5A
V
DD
R
= 25
G
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/s (Note 4)
F
= 6.5A - - 1.4 V
SD
= 6.5A
SD
-17.545ns
- 250 - ns
FDP7N60NZ / FDPF7N60NZ Rev. A
2
www.fairchildsemi.com
Typical Performance Characteristics
45678
0.1
1
10
100
-55oC
150oC
* Notes :
1. V
DS
= 20V
2. 250
s Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 10 20
0.1
1
10
20
*Notes:
1. 250
s Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
0.40.60.81.01.21.4
1
10
100
Notes:
1. VGS = 0V
2. 250
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 2 4 6 8 10 12 14
0.8
1.0
1.2
1.4
1.6
1.8
2.0
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(on)
[],
Drain-Source On-Resistance
ID, Drain Current [A]
0 2 4 6 8 10 12 14
0
2
4
6
8
10
* Note : ID = 6.5A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te Charge [n C]
0.1 1 10
1
10
100
1000
5000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP7N60NZ / FDPF7N60NZ Rev. A
3
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Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250uA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150
0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 3.25A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
1 10 100 1000
0.01
0.1
1
10
100
10s
100s
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
DC
1 10 100 1000
0.01
0.1
1
10
100
30s
100s
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
DC
25 50 75 100 125 150
0
2
4
6
8
I
D
, Drain Current [A]
TC, Case Temperature [oC]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
-FDPF7N60NZ -FDP7N60NZ
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Figure 11. Maximum Drain Current vs Case Temperature
FDP7N60NZ / FDPF7N60NZ Rev. A
4
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10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
JC
(t) = 3.8oC/W Max.
2. Duty Fac tor, D= t
1/t2
3. TJM - TC = PDM * Z
JC
(t)
0.5
Single pulse
Thermal Response [Z
JC
]
Rectangular Pulse Duration [sec]
5
10
-5
10
-4
10
-3
10
-2
10
-1
11010210
3
0.001
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
JC
(t) = 0.85oC/W Max.
2. Duty Fact or, D=t
1/t2
3. TJM - TC = PDM * Z
JC
(t)
0.5
Single pulse
Thermal Response [Z
JC
]
Rectangular Pulse Duration [sec]
5
Figure 12. Transient Thermal Response Curve
-FDPF7N60NZ
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
P
DM
t
1
t
2
FDP7N60NZ / FDPF7N60NZ Rev. A
Figure 13. Transient Thermal Response Curve
-FDP7N60NZ
P
DM
t
1
t
2
www.fairchildsemi.com5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
FDP7N60NZ / FDPF7N60NZ Rev. A
6
www.fairchildsemi.com
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP7N60NZ / FDPF7N60NZ Rev. A
7
www.fairchildsemi.com
Mechanical Dimensions
TO-220
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
FDP7N60NZ / FDPF7N60NZ Rev. A
Dimensions in Millimeters
8
www.fairchildsemi.com
Package Dimensions (Continued)
TO-220F
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
* Front/Back Side Isolation Voltage : 2500V
FDP7N60NZ / FDPF7N60NZ Rev. A
Dimensions in Millimeters
9
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TRADEMARKS
®
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its glob al subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
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CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
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ESBC™
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FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
max™
G
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
™
®
Sync-Lock™
®*
The Power Franchise
TinyBoost™
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TINYOPTO™
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TinyPWM™
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TriFault Detect™
TRUECURRENT™*
SerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
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®
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a g rowing problem in the industry. All manufactures of semiconductor p roducts are experiencing counte rfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems su ch as lo ss of brand reputation, su bstandard per formance, faile d
application, and increased cost of production and manufacturing delays. Fairchild is taking strong mea sures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encoura ges customers to purchase Fairchild parts eithe r directly fro m Fairchild or from Auth orized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDP7N60NZ / FDPF7N60NZ Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
10
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Rev. I48
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