Fairchild FDP7N50, FDPF7N50 service manual

FDP7N50/FDPF7N50

D

G

S

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

GSD

500V N-Channel MOSFET

FDP7N50/FDPF7N50 500V N-Channel MOSFET

April 2007

TM

UniFET

Features

• 7A, 500V, R

• Low gate charge ( typical 12.8 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 9 pF)

rss

= 0.9Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially
minimize
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

on-state resistance, provide superior switching

Absolute Maximum Ratings

Symbol Parameter FDP7N50 FDPF7N50 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

* Drain current limited by maximum junction temperature.

Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 7 A
Repetitive Avalanche Energy (Note 1) 8.9 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

7

4.2
28 28 * A

270 mJ

89

0.71

300 °C

7 *

4.2 *

31.3

0.25

Thermal Characteristics

tailored to

A
A

W

W/°C

Symbol Parameter FDP7N50 FDPF7N50 Unit

R

θJC

R

θCS Thermal Resistance, Case-to-Sink Typ.

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP7N50/FDPF7N50 REV. B

Thermal Resistance, Junction-to-Case 1.4 4.0 °C/W

0.5 -- °C/W

Thermal Resistance, Junction-to-Ambient

62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP7N50 FDP7N50 TO-220 -- -- 50

FDPF7N50 FDPF7N50 TO-220F -- -- 50

FDP7N50/FDPF7N50 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

I

= 250μA, Referenced to 25°C -- 0.5 -- V/°C

D

V

= 400V, TC = 125°C

DS

--

--

--

-­Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source

On-Resistance

V

= 10V, ID = 3.5A -- 0.76 0.9 Ω

GS

Forward Transconductance VDS = 40V, ID = 3.5A (Note 4) -- 2.5 -- S

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 95 190 pF

f = 1.0MHz

-- 720 940 pF

Reverse Transfer Capacitance -- 9 13.5 pF

Turn-On Delay Time VDD = 250V, ID = 7A

= 25Ω

R

Turn-On Rise Time -- 55 120 ns

G

-- 6 20 ns

Turn-Off Dela y Time -- 25 60 ns
Turn-Off Fall Time -- 35 80 ns
Total Gate Charge VDS = 400V, ID = 7A

V

= 10V

Gate-Source Charge -- 3.7 -- nC

GS

Gate-Drain Charge -- 5.8 -- nC

(Note 4, 5)

-- 12.8 16.6 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 7A

/dt =100A/μs (Note 4)

dI

Reverse Recovery Charge -- 1.7 -- µC

F

-- 275 -- ns

10

1

μA
μA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 7A, VDD = 50V, L=10mH, RG = 25Ω, Starting TJ = 25°C
≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDP7N50/FDPF7N50 REV. B

2 www.fairchildsemi.com

Typical Performance Characteristics

0 1020304050

0

5

10

15

20

V

GS

Top : 10.0 V

8.0 V

7.5 V

7.0 V

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10

-2

10

-1

10

0

10

1

* Note:

1. V

DS

= 40V

2. 250

μs Pulse Test

-55oC

150oC

25oC

I

D

, Drain Current [A]

VGS , Gate- Source Voltage [V]

0 5 10 15 20

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10

-1

10

0

10

1

25oC

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

I

DR

, Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

10

0

10

1

10

100

1000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

VDS, Drain-Source V oltage [V]

0 5 10 15

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

* Note : ID = 7 A

V

GS

, Gate-Source Voltage [V]

QG, Total Ga te Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP7N50/FDPF7N50 500V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP7N50/FDPF7N50 REV. B

3 www.fairchildsemi.com