Fairchild FDP75N08 service manual

查询FDP75N08供应商查询FDP75N08供应商

FDP75N08

75V N-Channel MOSFET

FDP75N08 75V N-Channel MOSFET

June 2006

TM

UniFET

Features

• 75A, 75V, R

• Low gate charge ( typical 150 nC)

• Low Crss ( typical 85 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.011Ω @VGS = 10 V

DS(on)

G

D

S

TO-220

FDP Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDP75N08 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 75 V
Drain Current - Continuous (TC = 25°C) 75 A

- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 131 W

- Derate above 25°C 1 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 47.7 A

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

300 A

1164 mJ

75 A

13.1 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FDP75N08 Units

R

θJC

R

θCS

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP75N08 Rev. A

Thermal Resistance, Junction-to-Case 0.95 °C/W
Thermal Resistance, Case-to-Sink 0.5 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP75N08 FDP75N08 TO-220 -- -- 50

FDP75N08 75V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics
V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics
C

iss

C

oss

C

rss

Switching Characteristics
t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings
I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 138µH, IAS = 75A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er at ur e

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA75----V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C
Zero Gate Voltage Drain Current VDS = 75 V, VGS = 0 V -- -- 1 µA

= 60 V, TC = 125°C -- -- 10 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 37.5 A -- 9.5 11 mΩ
Forward Transconductance VDS = 40 V, ID =37.5 A (Note 4) -- 15 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 680 890 pF

f = 1.0 MHz

-- 2940 3820 pF

Reverse Transfer Capacitance -- 85 125 pF

Turn-On Delay Time VDD = 37.5 V, ID = 75A,

R

= 25 Ω

Turn-On Rise Time -­Turn-Off Delay Time -­Turn-Off Fall Time --

G

(Note 4, 5)

Total Gate Charge VDS = 60 V, ID = 75A,

V

= 10 V

Gate-Source Charge -­Gate-Drain Charge --

GS

(Note 4, 5)

--

--

7.2 25
68 146
77 164
93 196
64 84
16
24

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 75 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 300 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 75 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 75 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 150 -- nC

Starting TJ = 25°C

DSS,

F

-- 62 -- ns

ns
ns
ns
ns

nC

FDP75N08 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

-550C

* Note :

1. V

=40V

DS

2. 250

µs Pulse Test

V

GS

Top: 15.0V

9.0V

7.5V

2

10

7.0V

6.5v

6.0V

5.5V

5.0V
Bottom : 4.5V

100

150

25

0

C

0

C

10

, Drain Current [A]

D

I

1

10

* Note :

1. 250

µs Pulse Test

=250C

2. T

C

0

10

VDS, Drain-Source Voltage [V]

1

10

, Drain Current [A]

D

I

1

246810

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDP75N08 75V N-Channel MOSFET

0.012

0.011

VGS = 10V

0.010

[Ω],

DS(ON)

0.009

R

0.008

Drain-Source On-Resistance

0.007
0 25 50 75 100 125 150 175 200

VGS = 20V

ID, Drain Current [A]

* Note : TJ = 25oC

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1500C

VDS, Source-Drain Violtage [V]

250C

* Note :

1. V

=0V

GS

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

C

= Cgs + Cgd (Cds = shorted)

6000

C

5000

4000

3000

2000

Capacitances [pF]

1000

0

-1

10

oss

C

iss

C

rss

0

10

iss

C

oss

C

rss

= Cds + C

= C

gd

10

gd

* Note :

1. V

2. f = 1 MHz

1

GS

= 0 V

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050607080

VDS = 37.5V

VDS = 60V

* Note : ID = 75A

QG, Total Gate Charge [nC]

FDP75N08 Rev. A

3 www.fairchildsemi.com