Fairchild FDP6N60ZU, FDPF6N60ZUT service manual
FDP6N60ZU / FDPF6N60ZUT
TO-220F
FDPF Series
G
S
D
TO-220
FDP Series
G
S
D
G
S
D
G
S
D
N-Channel MOSFET, FRFET
600V, 4.5A, 2Ω
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
April 2012
TM
UniFE
Features
•R
• Low gate charge ( Typ. 14.5nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A
DS(on)
( Typ. 5pF)
rss
o
= 25
C unless otherwise noted*
C
Symbol Parameter FDP6N60ZU FDPF6N60ZUT Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 105 33.8 W
C
- Derate above 25
STG
Drain Current
Drain Current - Pulsed (Note 1) 18 18* A
Single Pulsed Avalanche Energy (Note 2) 150 mJ
Avalanche Current (Note 1) 4.5 A
Repetitive Avalanche Energy (Note 1) 10.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 4.5 4.5*
C
= 100oC) 2.7 2.7*
C
o
C0.850.27W/
300
Thermal Characteristics
Symbol Parameter
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 1.2 3.7
Thermal Resistance, Case to Sink Typ. 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5
FDP6N60ZU FDPF6N60ZUT
A
o
o
C
o
C
Units
o
C/WR
C
©2012 Fairchild Semiconductor Corporation
FDP6N60ZU / FDPF6N60ZUT Rev. C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP6N60ZU FDP6N60ZU TO-220 - - 50
FDPF6N60ZUT FDPF6N60ZUT TO-220F - - 50
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC - 0.75 - V/oC
D
V
= 600V, V
DS
= 480V, TC = 125oC - - 250
V
DS
= 0V - - 25
GS
= 0V - - ±10 μA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.25A - 1.7 2.0 Ω
Forward Transconductance VDS = 40V, ID = 2.25A - 3.5 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 75 100 pF
Reverse Transfer Capacitance - 5 10 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 4 - nC
Gate to Drain “Miller” Charge - 6 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 25 60 ns
Turn-Off Delay Time - 25 60 ns
Turn-Off Fall Time - 45 100 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 480V, ID = 4.5A
DS
V
= 10V
GS
(Note 4)
= 300V, ID = 4.5A
V
DD
R
= 25Ω, VGS = 10V
G
(Note 4)
- 650 865 pF
- 14.5 20 nC
-1948ns
μA
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 15mH, I
3: I
≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4: Essentially Independent of Operating Temperature Typical Characteristics
FDP6N60ZU / FDPF6N60ZUT Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 18 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 37 - nC
= 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs
F
= 4.5A - - 1.6 V
SD
= 4.5A
SD
2
-36-ns
www.fairchildsemi.com
Typical Performance Characteristics
2468
0.1
1
10
20
25oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
VGS,Gate-Source Voltage[V]
I
D
,Drain Current[A]
0.1 1 10 20
0.1
1
10
20
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
036912
1.5
1.8
2.1
2.4
2.7
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0123
1
10
100
200
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 30
0
500
1000
1500
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Volta ge [V ]
0 5 10 15
0
2
4
6
8
10
*Note: ID = 4.5A
VDS = 150V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te C harge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP6N60ZU / FDPF6N60ZUT Rev. C0
3
www.fairchildsemi.com
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