Fairchild FDP6670AL, FDB6670AL service manual
FDP6670AL/FDB6670AL
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench MOSFET
May 2003
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
Features
• 80 A, 30 V R
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low R
DS(ON)
= 6.5 mΩ @ VGS = 10 V
DS(ON)
R
= 8.5 mΩ @ VGS = 4.5 V
DS(ON)
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
• 175°C maximum junction temperature rating
and fast switching speed.
D
S
G
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings T
D
S
=25oC unless otherwise noted
A
TO-263AB
FDB Series
G
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
± 20
Drain Current – Continuous (Note 1) 80 A
– Pulsed (Note 1) 240
Total Power Dissipation @ TC = 25°C
Derate above 25°C
68 W
0.45
W/°C
Operating and Storage Junction Temperature Range –65 to +175
V
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 2.2
Thermal Resistance, Junction-to-Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6670AL FDB6670AL 13’’ 24mm 800 units
FDP6670AL FDP6670AL Tube n/a 45
2003 Fairchild Semiconductor Corporation
°C/W
°C/W
FDP6670AL/FDB6670AL Rev D(W)
Electrical Characteristics T
FDP6670AL/FDB6670AL
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
DSS
I
AR
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSS
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source On–
Resistance
On–State Drain Current VGS = 10 V, VDS = 10 V 80 A
Forward Transconductance VDS = 10V, ID = 40 A 115 S
Input Capacitance 2440 pF
Output Capacitance 580 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4
Turn–On Delay Time 13 23 ns
Turn–On Rise Time 13 23 ns
Turn–Off Delay Time 42 68 ns
Turn–Off Fall Time
Total Gate Charge 24 33 nC
Gate–Source Charge 7 nC
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current 80 A
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 34 nS
Diode Reverse Recovery Charge
= 25°C unless otherwise noted
A
VDD = 15 V, ID = 80 A 114 mJ
80 A
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
24
mV/°C
µA
VGS = ± 20 V, VDS = 0 V ± 100
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 40 A
VGS = 4.5 V, ID = 37 A
VGS= 10 V, ID = 40 A, TJ=125°C
VDS = 15 V, V
GS
= 0 V,
1 1.9 3 V
–5
5.2
6.5
6.5
8.5
7.2
9.7
nA
mV/°C
mΩ
f = 1.0 MHz
250 pF
Ω
VDD = 10V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
15 27 ns
VDS = 15 V, ID = 40 A,
VGS = 5 V
9 nC
VGS = 0 V, IS = 40 A (Note 1) 0.9 1.3 V
IF = 40 A,
diF/dt = 100 A/µs
24 nC
FDP6670AL/FDB6670AL Rev D(W)
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