Fairchild FDP6644S, FDB6644S service manual

/

查询FDP6644S供应商查询FDP6644S供应商

JANUARY 2002

FDP6644S

FDP6644S/FDB6644S

30V N-Channel PowerTrench

General Description

This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low

and low gate charge. The FDP6644S includes

R

DS(ON)

an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6644S/FDB6644S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6644/FDB6644 in parallel with
a Schottky diode.

G

D

S

TO-220

FDP Series



SyncFET™

G

S

Features

• 28 A, 30 V. R

R

• Includes SyncFET Schottky body diode

• Low gate charge (27nC typical)

• High performance trench technology for extremely

low R

• High power and current handling capability

•

and fast switching

DS(ON)

D

= 10 mΩ @ VGS = 10 V

DS(ON)

= 12 mΩ @ VGS = 4.5 V

DS(ON)

G

D

TO-263AB

FDB Series

S

FDB6644S

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1)

– Pulsed (Note 1)

PD

TJ, T

STG

TL Maximum lead temperature for soldering purposes,

Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Junction Temperature Range –65 to +125

1/8” from case for 5 seconds

= 25°C

C

±16

55

150

60

0.48

275

V
A

W

W/°C

°C

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.1

62.5

°C/W

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB6644S FDB6644S 13’’ 24mm 800 units

FDP6644S FDP6644S Tube n/a 45

2002 Fairchild Sem iconductor Corporation

FDP6644S/FDB6644S Rev C1(W)

/

FDP6644S

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage VGS = 0 V, ID = 1mA 30 V

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 uA

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

= 10mA, Referenced to 25°C

I

D

23

mV/°C

Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –16 V VDS = 0 V –100 nA

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 1mA 1 1.3 3 V

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

I

D(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= 10mA, Referenced to 25°C

I

D

VGS = 10 V, ID = 28 A

= 4.5 V, ID = 25 A

V

GS

=10 V, ID =28 A, TJ=125°C

V

GS

–9.5

7

10

8

12

11.5

17

mV/°C

mΩ

On–State Drain Current VGS = 10 V, VDS = 5 V 60 A

gFS Forward Transconductance VDS = 5 V, ID = 28 A 89 S

Dynamic Characteristics

C

Input Capacitance 2851 pF

iss

C

Output Capacitance 540 pF

oss

C

Reverse Transfer Capacitance

rss

= 15 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

196 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 12 21 ns

d(on)

tr Turn–On Rise Time 11 20 ns

t

Turn–Off Delay Time 53 85 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 27 38 nC

Qgs Gate–Source Charge 7 nC

Qgd Gate–Drain Charge

= 15 V, ID = 1 A,

V

DS

= 10 V, R

V

GS

= 15 V, ID = 28 A,

V

DS

V

= 5 V

GS

GEN

= 6 Ω

17 30 ns

8 nC

FDB6644S

Drain–Source Diode Characteristics

VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Time 21 nS

Qrr Diode Reverse Recovery Charge

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. See “SyncFET Schottky body diode characteristics” below.

VGS = 0 V, IS = 3.5 A (Note 1)
VGS = 0 V, IS = 7 A (Note 1)
I

= 28 A,

F

= 300 A/µs (Note 2)

d

iF/dt

0.48

34 nC

0.7 V

0.6

FDP6644S/FDB6644S Rev C1 (W)