Fairchild FDP65N06 service manual

FDP65N06

60V N-Channel MOSFET

FDP65N06 60V N-Channel MOSFET

June 2006

TM

UniFET

Features

• 65A, 60V, R

• Low gate charge ( typical 132nC)

• Low Crss ( typical 35pF)

•Fast switching

• Improved dv/dt capability

= 0.016Ω @VGS = 10 V

DS(on)

G

D

S

TO-220

FDP Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDP65N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 60 V
Drain Current - Continuous (TC = 25°C) 65 A

- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 135 W

- Derate above 25°C 1.08 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 41 A

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

260 A

430 mJ

65 A

13.5 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FDP65N06 Units

R

θJC

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP65N06 Rev. A1

Thermal Resistance, Junction-to-Case 0.92 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP65N06 FDP65N06 TO-220 -- -- 50

FDP65N06 60V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics
V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics
C

iss

C

oss

C

rss

Switching Characteristics
t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings
I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 47µH, IAS =65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 65A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er at ur e

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA60----V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA

= 48 V, TC = 125°C -- -- 10 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 32.5 A -- 0.013 0.016 Ω
Forward Transconductance VDS = 40 V, ID = 32.5 A (Note 4) -- 39 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 464 600 pF

f = 1.0 MHz

-- 1670 2170 pF

Reverse Transfer Capacitance -- 35 52 pF

Turn-On Delay Time VDD = 30 V, ID = 65A,

R

= 25 Ω

Turn-On Rise Time -­Turn-Off Delay Time -­Turn-Off Fall Time --

G

(Note 4, 5)

Total Gate Charge VDS = 48 V, ID = 65A,

V

= 10 V

Gate-Source Charge -­Gate-Drain Charge --

GS

(Note 4, 5)

--

24 58
94 200
98 210
52 114

--

33 43
10
11

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 65 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 260 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 65 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 65 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 132 --

Starting TJ = 25°C

DSS,

F

-- 62 -- ns

ns
ns
ns
ns

nC

nC

FDP65N06 Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDP65N06 60V N-Channel MOSFET

, Drain Current [A]

D

I

300

100

V
Top : 15 .0 V

1 0 .0 V
8 .0 V
7 .0 V
6 .5 V
6 .0 V
Botto m : 5.5 V

10

2

0.1

GS

* No te s :

1. 2 5 0

2. T

110

VDS, Drain-Source Voltage [V]

µs Pulse Test

= 25oC

C

500

150oC

100

25oC

, Drain Current [A]

D

I

10

-55oC

* Notes :

= 40V

1. V

DS

µ s Pulse Test

1

246810

VGS, Ga te -So urc e V o ltag e [V]

2. 250

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.14

0.12

0.10

0.08

[Ω],

0.06

DS(ON)

R

0.04

Drain-Source On-Resistance

0.02

0 5 10 15 20

VGS = 10V

VGS = 20V

ID, Drain Current [A]

* Note : TJ = 25oC

100

10

1500C

250C

, Reverse Drain Current [A]

DR

I

1

0.20.40.60.81.01.21.4

VDS, Source-Drain Violtage [V]

* Note :

1. V

=0V

GS

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3000

2000

Capacitances [pF]

1000

0

-1

10

FDP65N06 Rev. A1

C

oss

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

0

10

gd

= C

rss

gd

* Note :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040

VDS = 12V
VDS = 30V

VDS = 48V

QG, Total Gate Charge [nC]

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* Note : ID = 65A