Fairchild FDP61N20 service manual
FDP61N20
D
200V N-Channel MOSFE T
FDP61N20 200V N-Channel MOSF ET
September 2005
TM
UniFET
Features
• 61A, 200V, R
• Low gate charge ( typical 58 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 80 pF)
rss
= 0.041Ω @VGS = 10 V
DS(on)
G
D
S
TO-220
FCP Series
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
{
{
z
z
z
{
{
G
z
z
z
{
{
S
Absolute Maximum Ratings
Symbol Parameter FDP61N20 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 200 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current (Note 1) 61 A Repetitive Avalanche Energy (Note 1) 41.7 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 4.5 V/ns
61
38.5
244 A
1440 mJ
417
3.3
300 °C
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θJA
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP61N20 Rev. A
Thermal Resistance, Junction-to-Case -- 0.3 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP61N20 FDP61N20 TO-220 - - 50
FDP61N20 200V N-Channel MOSF ET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 200 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V
I
= 250µA, Referenced to 25°C--0.2--V/°C
D
V
= 160V, TC = 125°C
DS
--
--
--
--
1
10
µA
µA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID =30.5A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 645 840 pF
= 10V, ID = 30.5A -- 0.034 0.041 Ω
V
GS
(Note 4)
-- 44.5 -- S
-- 2615 3380 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 80 120 pF
Turn-On Delay Time VDD = 100V, ID = 61A
= 25Ω
R
Turn-On Rise Time -- 215 440 ns
G
-- 40 90 ns
Turn-Off Delay Time -- 125 260 ns
Turn-Off Fall Time -- 1 7 0 350 ns
Total Gate Charge VDS = 160V, ID = 61A
= 10V
V
Gate-Source Charge -- 19 -- nC
GS
Gate-Drain Charge -- 24 -- nC
(Note 4, 5)
-- 58 75 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 61 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 244 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 61A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 61A
/dt =100A/µs (Note 4)
dI
Reverse Recovery Charge -- 1.5 -- µC
F
-- 162 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.58mH, IAS = 61A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 61A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FDP61N20 Rev. A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
Top : 1 5.0 V
2
10.0 V
10
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
GS
2
10
FDP61N20 200V N-Channel MOSF ET
1
10
, Drain Current [A]
D
I
? Notes :
1. 250 Pulse Test
탎
0
10
-1
10
0
10
2. TC = 25?
1
10
VDS, Drain-Source Voltage [V]
1
10
, Drain Current [A]
D
I
10
150oC
25oC
-55oC
0
24681012
? Notes :
1. V
= 40V
DS
탎
2. 250 Pulse Test
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.06
0.05
0.04
0.03
[O ], Drain-Source O n-Resist ance
DS(ON)
R
0.02
0 255075100125150
VGS = 10V
VGS = 20V
? Note : TJ = 25
ID, Drain C u r rent [A]
2
10
1
10
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
150?
25?
VSD, Source-Drain voltage [V]
? Notes :
= 0V
1. V
GS
2. 250 Pulse Test
탎
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
6000
4000
2000
Capacitances [pF]
0
-1
10
FDP61N20 Rev. A
C
oss
C
iss
C
rss
0
10
VDS, Drain-Sourc e Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
? Note ;
1. V
2. f = 1 MH z
1
10
12
10
8
= 0 V
GS
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 102030405060
VDS = 40V
VDS = 100V
VDS = 160V
? Note : ID = 61A
QG, Total Gate Charge [nC]
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