Fairchild FDP6035AL, FDB6035AL service manual
FDP6035AL/FDB6035AL
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FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrench MOSFET
July 2003
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
and fast switching speed.
DS(ON)
G
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings T
S
=25oC unless otherwise noted
A
Features
• 48 A, 30 V R
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low R
DS(ON)
• 175°C maximum junction temperature rating
D
= 12 mΩ @ VGS = 10 V
DS(ON)
R
= 14 mΩ @ VGS = 4.5 V
DS(ON)
G
D
TO-263AB
FDB Series
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous 48 A
– Pulsed (Note 1) 180
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range –65 to +175
± 20
52 W
0.3
W/°C
V
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 2.9
Thermal Resistance, Junction-to-Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6035AL FDB6035AL 13’’ 24mm 800 units
FDP6035AL FDP6035AL Tube n/a 45
2003 Fairchild Semiconductor Corporation
°C/W
FDP6035AL/FDB6035AL Rev D(W)
Electrical Characteristics T
FDP6035AL/FDB6035AL
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
E
AS
I
AS
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSS
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source On–
Resistance
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
Forward Transconductance VDS = 10V, ID = 24 A 68 S
Input Capacitance 1250 pF
Output Capacitance 330 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 12 22 ns
Turn–Off Delay Time 29 46 ns
Turn–Off Fall Time
Total Gate Charge 13 18 nC
Gate–Source Charge 4.3 nC
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current 60 A
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 26 nS
Diode Reverse Recovery Charge
= 25°C unless otherwise noted
A
VDD = 15 V, ID = 48 A 58 mJ
48 A
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
23
mV/°C
µA
VGS = ± 20 V, VDS = 0 V ± 100
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 24 A
VGS = 4.5 V, ID = 20 A
VGS= 10 V, ID = 24 A, TJ=125°C
VDS = 15 V, V
GS
= 0 V,
1 1.9 3 V
–5
7.9
10.2
13.0
12
14
21
nA
mV/°C
mΩ
f = 1.0 MHz
155 pF
Ω
VDD = 15V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
12 21 ns
VDS = 15 V, ID = 48 A,
VGS = 5 V
5.5 nC
VGS = 0 V, IS = 24 A (Note 1) 0.92 1.3 V
IF = 24 A,
diF/dt = 100 A/µs
15 nC
FDP6035AL/FDB6035AL Rev D(W)
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