Fairchild FDP6030L service manual
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April 1998
FDP6030L / FDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
52 A, 30 V. R
R
Improved replacement for NDP6030L/NDB6030L.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
_________________________________________________________________________________
= 0.0135 Ω @ VGS=10 V
DS(ON)
= 0.020 Ω @ VGS=4.5 V.
DS(ON)
D
G
S
Absolute Maximum Ratings T
Symbol Parameter FDP6030L FDB6030L Units
V
DSS
V
GSS
I
D
P
D
TJ,T
THERMAL CHARACTERISTICS
R
JC
θ
R
θJA
Drain-Source Voltage 30 V
Gate-Source Voltage - Continuous ±20 V
Drain Current - Continuous 52 A
- Pulsed 156
Maximum Power Dissipation @ TC = 25°C
Derate above 25°C 0.5 W/°C
Operating and Storage Temperature Range -65 to 175 °C
STG
Thermal Resistance, Junction-to-Case 2 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
= 25°C unless otherwise note
C
75 W
© 1998 Fairchild Semiconductor Corporation
FDP6030L Rev.C1
Electrical Characteristics T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 21 A 150 mJ
Maximum Drain-Source Avalanche Current 21 A
OFF CHARACTERISTICS
BV
∆BV
I
DSS
I
GSSF
I
GSSR
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V
GS
= 0 V
37
10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
mV/oC
-100 nA
ON CHARACTERISTICS (Note 1)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V
Gate Threshold Voltage Temp.Coefficient
/∆T
J
Static Drain-Source On-Resistance
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 26 A
TJ = 125°C
-4
0.0095 0.0135
0.014 0.023
mV/oC
Ω
VGS = 4.5 V, ID = 21 A 0.015 0.02
I
I
g
D(on)
D(on)
FS
On-State Drain Current
VGS = 10 V, VDS = 10 V
On-State Drain Current VGS = 4.5 V, VDS = 10 V 15 A
Forward Transconductance
VDS = 10 V, ID = 26 A
60 A
37 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 640 pF
f = 1.0 MHz
Reverse Transfer Capacitance 175 pF
1230 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 15 V, ID = 52 A 7.6 15 nS
Turn - On Rise Time
VGS = 10 V, R
GEN
= 24 Ω
150 210 nS
Turn - Off Delay Time 29 46 nS
Turn - Off Fall Time 17 27 nS
Total Gate Charge VDS= 12 V
Gate-Source Charge 6 nC
ID = 26 A, V
GS
= 10 V
34 46 nC
Gate-Drain Charge 8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Note
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuos Drain-Source Diode Forward Current 52 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 26 A (Note 1) 0.91 1.3 V
TJ = 125°C
0.8 1.2
FDP6030L Rev.C1
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