Fairchild FDP5N50F, FDPF5N50FT service manual
tm
UniFET
D
G
S
TO-220F
FDPF Series
G
S
D
TO-220
FDP Series
G D S
FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55Ω
FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET
May 2012
TM
Features
•R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A
DS(on)
( Typ. 5pF)
rss
= 25oC unless otherwise noted*
C
Symbol Parameter FDP5N50F FDPF5N50FT Units
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 85 28 W
C
- Derate above 25
STG
Drain Current
Drain Current - Pulsed (Note 1) 18 18* A
Single Pulsed Avalanche Energy (Note 2) 233 mJ
Avalanche Current (Note 1) 4.5 A
Repetitive Avalanche Energy (Note 1) 8.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factorcorrection.
= 25oC) 4.5 4.5*
C
= 100oC) 2.7 2.7*
C
o
C 0.67 0.22 W/oC
300
o
o
Thermal Characteristics
Symbol Parameter FDP5N50F FDPF5N50FT Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 1.4 4.5
Thermal Resistance, Case to Sink Typ. 0.5 -
Thermal Resistance, Junction to Ambient 62.5 62.5
o
C/WR
A
C
C
©2012 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. C1
www.fairchildsemi.com1
FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP5N50F FDP5N50F TO-220 - - 50
FDPF5N50FT FDPF5N50FT TO-220F - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.6-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 100
V
DS
= 0V - - 10
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2.25A - 1.25 1.55 Ω
Forward Transconductance VDS = 20V, ID = 2.25A (Note 4) -4.3-S
Input Capacitance
Output Capacitance - 66 88 pF
Reverse Transfer Capacitance - 5 7.5 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 5A
Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5 - nC
DS
V
= 10V
GS
( Note 4 , 5)
- 490 650 pF
-1115nC
μA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 28 66 ns
Turn-Off Fall Time - 20 50 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =23 mH, I
3: I
≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 18 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 120 - nC
= 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 5A
V
DD
R
= 25Ω
G
(N ote 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 4.5A - - 1.5 V
SD
= 5A
SD
-1336ns
-65-ns
FDP5N50F / FDPF5N50FT Rev. C1
2
www.fairchildsemi.com
Typical Performance Characteristics
0.1 1 10
0.1
1
10
0.04
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
45678
0.1
1
10
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
20
0.00.40.81.21.6
1
10
0.2
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
50
0 4 8 12 16 20
1.2
1.4
1.6
1.8
2.0
2.2
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10
0
250
500
750
1000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
036912
0
2
4
6
8
10
*Note: ID = 5A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP5N50F / FDPF5N50FT N-Channel MOSFET, FRFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP5N50F / FDPF5N50FT Rev. C1
3
www.fairchildsemi.com
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