Fairchild FDP5800 service manual

tm

FDP5800 N-Channel Logic Level PowerTrench

60V,80A, 6mΩ

®

MOSFET

FDP5800 N-Channel Logic Level PowerTrench

November 2006

Features

•R

• High performance trench technology for extermly low Rdson

• Low gate Charge

• High power and current handing capability

•RoHs Compliant

= 4.6mΩ (Typ.), VGS = 10V, ID = 80A

DS(on)

Applications

• Motor/ Body Load Control

• Power Train Management

• Injection Systems

• DC-AC Converters and UPS

G

D

TO-220

S

D

G

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

P

D

, T

T

J

STG

*Drain current limited by package

Drain-Source Voltage 60 V

Gate-Source Voltage ±20 V

D r a i n C u r r e n t

Drain Current - Pulsed 320 A

Single Pulsed Avalanche Energy (Note 1) 652 mJ

Power Dissipation (TC = 25oC)

- Derate above 25

Operating and Storage Temperature Range -55 to +175 °C

FDP Series

= 25°C unless otherwise noted*

C

-Continuous (T

= 25oC) 80 A

C

= 100oC) A 80*

C

= 25oC) 14 A

A

o

C

S

242

1.61

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance , Junction to Case 0.62 °C/W

Thermal Resistance , Junction to Ambient, 1in2 copper pad area 43 °C/W

Thermal Resistance , Junction to Ambient 62.5 °C/W

®

MOSFET

W

W/°C

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP5800 FDP5800 TO220 -- -- 50

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FDP5800 N-Channel Logic Level PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ =25oC60 -- --V

V

= 48V

Zero Gate Voltage Drain Current

DS

V

= 0V

GS

Gate-Body Leakage Current, Forward VGS = ±20V, V

= 150°C -- -- 500 µA

T

J

= 0V -- -- ±100 nA

DS

-- -- 1 µA

On Characteristics

V

GS(th)

R

DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250µA1.0--2.5V

= 10V , ID = 80A -- 4.6 6.0 mΩ

V

GS

=4.5V , ID = 80A -- 5.9 7.2 mΩ

V

Static Drain-Source On Resistance

GS

= 5V , ID = 80A -- 5.6 7.0 mΩ

V

GS

=10V, ID = 80A

V

GS

T

= 175oC

J

-- 10.4 12.6 mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

g(TH)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance -- 750 1000 pF

Reverse Transfer Capacitance -- 295 445 pF

= 15V,VGS = 0V

V

DS

f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz -- 1.2 -- Ω

Total Gate Charge at 10V VGS = 0V to 10V

Total Gate Charge at 5V VGS = 0V to 5V -- 58 -- nC

Threshold Gate Charge VGS = 0V to 1V -- 7.0 -- nC

Gate to Source Gate Charge -- 23 -- nC

Gate Charge Threshold to Plateau -- 13 -- nC

V

DS

I

D

I

g

= 30V

= 80A

= 1mA

Gate to Drain “Miller” Charge -- 18 -- nC

-- 6890 9160 pF

-- 112 145 nC

®

MOSFET

Switching Characteristics

t

ON

t

d(on)

t

r

t

d(off)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time -- 18 46 ns

Turn-On Rise Time -- 19 47 ns

Turn-Off Delay Time -- 55 120 ns

Turn-Off Fall Time -- 9 28 ns

Turn-Off Time -- 64 138 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 106 -- nC

= 30V, ID = 80A

V

DD

V

= 10V, R

GS

V

= 0V, I

GS

= 0V, I

V

GS

V

= 0V, I

GS

dI

/dt = 100A/µs

F

-- 37 85 ns

= 1.5Ω

GEN

= 80A -- -- 1.25 V

SD

= 40A -- -- 1.0 V

SD

= 60A

-- 58 -- ns

FDP5800 Rev. A

2

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Typical Performance Characteristics

FDP5800 N-Channel Logic Level PowerTrench

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

400

* Notes :

µs Pulse Test

1. 250

= 25oC

2. T

C

100

,Drain Current[A]

D

I

10

5

0.03

0.1 1

VDS,Drain-Source Voltage[V]

V Top : 10.0 V

5.0 V

4.5 V

4.0 V

3.5 V Bottom : 3.0 V

GS

1000

VDS = 6V

100

150oC

10

3

,Drain Current[A]

D

I

1

0.1 12345

VGS,Gate-Source Voltage[V]

25oC

-55oC

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

5.5

5.0

VGS = 10V

1000

100

VGS = 0V

150oC

®

MOSFET

[mΩ],

DS(ON)

4.5

R

Drain-Source On-Resistance

4.0 0 40 80 120 160 200

* Note : TJ = 25oC

ID, Drain Current [A]

VGS = 20V

10

, Reverse Drain Current [A]

S

I

1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Body Diode Forward Voltage [V]

25oC

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000

9000

7500

6000

4500

3000

Capacitances [pF]

1500

100

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

C

iss

oss

C

rss

= C

gd

C

oss

C

rss

-1

10

0

10

VDS, Drain-Source Voltage [V]

* Note:

1. V

= 0V

GS

2. f = 1MHz

1

10

30

10

8

VDS = 25V

V

= 35V

DS

= 50V

V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 20406080100120

* Note : ID = 80A

Qg, Total Gate Charge [nC]

FDP5800 Rev. A

3

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