Fairchild FDP5680 service manual

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FDP5680/FDB5680

60V N-Channel PowerTrench

TM

MOSFET

FDP5680/FDB5680

July 2000

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R specifications resulting in DC/DC power supply designs with higher overall efficiency.

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

DS(on)

G

= 25°C unless otherwise noted

C

Symbol Parameter

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 60 V Gate-Source Voltage Maximum Drain Current - Continuous 40 A

- Pulsed 120 Total Power Dissipation @ TC = 25°C Derate above 25°C

Operating and Storage Junction Temperature Range -65 to +175

Features

 40 A, 60 V. R

 Critical DC electrical parameters specified at evevated temperature.

 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

 High performance trend technology for extremely low R

 175°C maximum junction temperature rating.

= 0.020 Ω @ VGS = 10 V

DS(ON)

R

= 0.023 Ω @ VGS = 6 V.

DS(ON)

.

DS(ON)

D

G

S

TO-263AB

FDB Series

FDP5680 FDB5680

±20

65 W

0.43

D

S

Units

V

W/°C

°C

Thermal Characteristics

R

JC

θ

R

JA

θ

Thermal Resistance, Junction-to-Case 2.3 Thermal Resistance, Junction-to-Ambient 62.5

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDB5680 FDB5680 13’’ 24mm 800 FDP5680 FDP5680 Tube N/A 45

2000 Fairchild Semiconductor International

°C/W °C/W

FDP5680/FDB5680 Rev. C

FDP5680/FDB5680

Electrical Characteristics

Tc = 25°C unless otherwise noted

Symbol Pa rameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings

W

DSS

I

AR

Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Av al anche Current 40 A

(Note1)

VDD = 30 V, ID = 40A 90 mJ

Off Characteristics

BV

DSS

BV

∆

T

J

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

V

∆

T

J

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA60 V Breakdown Voltage Temperature

ID = -250

A, Referenced to 25°C60 mV/

Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1

Gate-Body Leakage Current,

VGS = 20 V, VDS = 0 V 100 nA

A

µ

Forward Gate-Body Leakage Current,

VGS = -20 V, VDS = 0 V -100 nA

Reverse

(Note 1)

Gate Threshold Voltage VDS = VGS, ID = 250 µA22.54V Gate Threshold Voltage

ID = -250

A, Referenced to 25°C-6.4 mV/

Temperature Coefficient Static Drain-Source

On-Resistance

VGS = 10 V, ID = 20 A,

= 10 V, ID = 20 A,TJ = 125°C

V

GS

= 6 V, ID = 19 A

V

GS

0.016

0.022

0.018

0.020

0.035

0.023

Ω

On-State Drain Current VGS = 10 V, VDS = 5 V 20 A Forward Transconductance VDS = 5 V, ID = 20 A 43 S

C

°

C

°

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1850 pF Output Capacitance 230 pF Reverse Transfer Capacitance

Switching Characteristics

t t t t Q Q Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 15 27 ns Turn-On Rise Time 9 18 ns Turn-Off Delay Time 35 56 ns Turn-Off Fall Time Total Gate Charge 33 46 nC Gate-Source Charge 6.5 nC Gate-Drain Charge

(Note 1)

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

V

= 30 V, ID = 1 A,

DD

= 10 V, R

V

GS

V

= 30 V, ID = 20 A

DS

= 10 V

V

GS

GEN

= 6

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Note:

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward

VGS = 0 V, IS = 20 A

(Note 1)

Voltage

(Note 1)

95 pF

16 26 ns

7.5 nC

40 A

0.9 1.2 V

FDP5680/FDB5680 Rev. C

Typical Characteristics

FDP5680/FDB5680

80

70

60

50

40 30

20

, DRAIN-SOURCE CURRENT (A)

D

10

I

0

01234

VGS = 10V

6.0V

5.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

4.5V

4.0V

2.2

2

VGS = 4.0V

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8 0 1020304050607080

4.5V

5.0V

6.0V

, DRAIN CURRENT (A)

I

D

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

ID = 20A

1.8 = 10V

V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTA NCE

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation

with Temperature.

60

VDS = 5V

50

40

30

TA = -55oC

125oC

25oC

0.05

0.04

0.03

0.02

, ON-RESISTANCE (OHM )

0.01

DS(ON)

R

0

345678910

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = 125oC

TA = 25oC

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

TA = 125oC

25oC

-55oC

10V

ID = 20A

20

, DRAIN CURRENT (A)

D

I

10

0

23456

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001

00.20.40.60.811.21.4

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDP5680/FDB5680 Rev. C

Typical Characteristics (continued)

FDP5680/FDB5680

10

ID = 20A VDS = 10V

8

6

4

30V

20V

2500

2000

1500

1000

C

ISS

CAPACITANCE (pF)

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20 25 30 35

Q

, GATE CHARGE (nC)

g

500

0

C

OSS

C

RSS

0 102030405060

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

100

RDS(ON) LIMIT

10ms

100ms

DC

10s

1s

10

DRAIN CURRENT (A)

D

I

0.1

VGS = 10V

1

SINGLE PULSE

= 2.3oC/W

R

θ

JC

= 25oC

T

C

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

1ms

1500

SINGLE PULSE

R

1200

θJC

900

600

POWER (W)

300

0

0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE TIME (SEC)

= 2.3oC/W

= 25oC

T

C

f = 1MHz

V

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

E V

D = 0.5

0.5

0.3

0.2

0.1

0.05

0.1

0.02 Single Pulse

0.05

r

TRANSIENT THERMAL RESISTANCE

0.03

0.1 0.5 1 10 100 1000 3000 10000

I T C E F F E

D

E Z

I

L A

M R O N

,

)

t

(

t ,TIME (ms)

1

R (t) = r(t) * R

JC

θ

R =2.3 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

Duty Cycle, D = t /t

JCC

θ

1 2

JC

θ

Figure 11. Transient Thermal Response Curve.

FDP5680/FDB5680 Rev. C

TO-220 Tape and Reel Data and Package Dimensions

TO-220 Tube Packing Configuration: Figure 1.0

45 units per Tube

12 Tubes per Bag

530mm x 130mm x 83mm

2 bags per Box

Conduct ive Plastic Bag

Intermediate box

Packaging Description:

TO-220 parts are ship ped normally in tube. The tub e is made of PVC plas tic treated wi th anti -stati c agent .These tubes in s tandard opt ion are placed in side a di ssipativ e plastic bag, barcode labeled, and placed inside a box made of r ecy cl able cor rug ate d pape r. On e bo x c ont ain s tw o ba gs m ax im um (se e fi g. 1. 0). A nd on e or se ver al o f these boxes are placed ins ide a labeled shipp ing box wh ic h c o m es in d i f f er en t si z es de pe ndi n g o n t h e nu m be r of parts shipped. The other option comes in bulk as described in the Packagin g In fo rm atio n table. The unit s in this op tion ar e placed inside a s mall box laid w ith antistatic bu bble sheet. These smaller box es are indiv idually labeled and plac ed inside a lar ger box (see fig. 3.0). These larger or int ermediate boxes then w ill be placed finally ins ide a labeled ship ping box whic h st ill co mes in diff erent sizes depending on the num b er of units shipped.

TO-220 Packaging Information: Figure 2.0

TO-220 Packaging Information

Packaging Option Packaging type

Qty per Tube/Box Box Dimension (mm) Max qty per Box Weight per unit (gm)

Note/Comments

Stan dard

(no fl ow code )

Rail/Tube

45

530x130x83

1,080

1.4378

S62Z BULK

114x102x51

1,500

1.4378

TO-220 bulk Packing Configuration: Figure 3.0

FSCINT Label

300 units per

EO70 box

114mm x 102mm x 51mm

TO-220 Tube Configuration: Figure 4.0

Note: All dim ensi o ns are in inches

9852

F

NDP4060L

F

NDP4060L

F

NDP4060L

300

EO70 Immediate Box

9852

F

NDP4060L

9852

F

NDP4060L

9852

F

NDP4060L

Anti-static

Bubbl e Sheets

5 EO70 boxes per per

Intermed iate Box

9852

F

NDP4060L

F

NDP4060L

20.000 +0.031

-0.065

F

NDP4060L

1080 units maximum

quantity per box

FSCINT Label

0.123

+0.001

-0.003

9852

F

NDP4060L

9852

F

NDP4060L

FSCINT Label sample

530mm x 130mm x 83mm

Intermediate box

FSCINT Label

0.450

9852

F

NDP4060L

±.030

0.800

FAIRCHILD SEMICONDUCTOR CORPORAT ION

LOT:

CBVK741B019

NSID:

FDP7060

D/C1:

SPEC REV:

D9842

1500 units maximum

quantity per intermediate box

0.165

0.080

0.275

1.300 ±.015

0.032 ±.003

0.275

QA REV:

0.160

HTB:B

QTY:

1080

SPEC:

B2

(FSCINT)

August 1999, Rev. B