Fairchild FDP5645, FDB5645 service manual
S
FDP5645/FDB5645
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FDP5645/FDB5645
60V N-Channel PowerTrench
®
MOSFET
March 2000
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 80 A, 60 V. R
• Critical DC electrical parameters specified at
elevated temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor.
• High performance trench technology for extremely
low R
DS(ON)
.
= 0.0095 Ω @ VGS = 10 V
DS(ON)
R
= 0.011 Ω @ VGS = 6 V.
DS(ON)
• 175°C maximum junction temperature rating.
D
S
G
G
D
TO-220
FDP Series
Absolute Maximum Ratings T
D
S
=25oC unless otherwise noted
A
TO-263AB
FDB Series
G
Symbol Parameter FDP5645 FDB5645 Units
V
DSS
V
GSS
I
D
D
TJ, T
T
L
STG
Drain-Source Voltage 60 V
Gate-Source Voltage
±20
Maximum Drain Current – Continuous (note 3) 80 A
– Pulsed 300
Total Power Dissipation @ TC = 25°C
Derate above 25°C
125 WP
0.83
W/°C
Operating and Storage Junction Temperature Range -65 to +175
Maximum lead termperature for soldering purposes,
+275
1/8“ from case for 5 seconds
V
°C
°C
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2000 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case 1.2 °C/W
Thermal Resistance, Junction-to-Ambient 62.5
°C/W
FDB5645 FDB5645 13” 24mm 800 units
FDP5645 FDP5645
note 2
FDP5645/FDB5645 Rev B (W)
Electrical Characteristics T
FDP5645/FDB5645
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = 40 V, ID = 80 A 800 mJ
80 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 64 mV/°C
60 V
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V –100 nA
µA
On Characteristics (Note 1)
V
GS(th)
∆VGS( th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 40 A
VGS=10V, ID = 40 A, TJ=125°C
VGS = 6 V, ID = 38 A
2 4 V
-7.8 mV/°C
8
13
9
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
Forward Transconductance VDS = 5 V, ID = 40 A 88 S
9.5
18
11
m Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 4468 pF
Output Capacitance 810 pF
Reverse Transfer Capacitance
VDS = 30 V, V
f = 1.0 MHz
GS
= 0 V,
198 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
I
S
V
SD
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
Turn–On Delay Time 21 30 ns
Turn–On Rise Time 13 20 ns
VDD = 30 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
Turn–Off Delay Time 77 90 ns
Turn–Off Fall Time
Total Gate Charge 76 107 nC
Gate–Source Charge 18 nC
VDS = 30 V, ID = 80 A,
VGS = 10 V
Gate–Drain Charge
42 50 ns
21 nC
Maximum Continuous Drain–Source Diode Forward Current 80 A
Maximum Pulsed Drain–Source Diode Forward Current 300 A
Drain–Source Diode Forward
VGS = 0 V, IS = 40 A 0.9 1.3 V
Voltage
FDP5645/FDB5645 Rev. B (W)
Typical Characteristics
FDP5645/FDB5645
100
VGS = 10V
7.0V
80
60
40
20
, DRAIN-SOURCE CURRENT (A)
D
I
0
0 1 2 3 4 5
6.0V
5.0V
4.5V
4.0V
VDS, DRAIN-SOURCE VOLTAGE (V)
2
1.8
1.6
VGS = 4.5V
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 20 40 60 80 100
5.0V
6.0V
7.0V
ID, DRAIN CURRENT (A)
8.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
ID = 42A
2
VGS = 10V
1.8
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
0.024
0.02
0.016
0.012
0.008
, ON-RESISTANCE (OHM)
DS(ON)
0.004
R
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC
TA = 25oC
10V
ID = 42A
90
80
70
60
50
40
30
, DRAIN CURRENT (A)
D
I
20
10
0
2 3 4 5 6
Figure 3. On-Resistance Variation
withTemperature.
VDS = 5V
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
25oC
-55oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP5645/FDB5645 Rev. B (W)
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