Fairchild FDP4N60NZ, FDPF4N60NZ service manual
G
S
D
G
S
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TO-220
FDP Series
G D S
TO-220F
FDPF Series
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FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET
FDP4N60NZ / FDPF4N60NZ
N-Channel MOSFET
600V, 3.8A, 2.5Ω
Features
•R
• Low Gate Charge ( Typ. 8.3nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
•RoHS Compliant
= 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A
DS(on)
( Typ. 3.7pF)
rss
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
December 2011
UniFET-II
TM
MOSFET Maximum Ratings T
Symbol Parameter FDP4N60NZ FDPF4N60NZ Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 15 15* A
Single Pulsed Avalanche Energy (Note 2) 223.8 mJ
Avalanche Current (Note 1) 3.8 A
Repetitive Avalanche Energy (Note 1) 8.9 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 89 28 W
C
- Derate above 25
= 25oC) 3.8 3.8*
C
= 100oC) 2.3 2.3*
C
o
C 0.71 0.22 W/oC
300
Thermal Characteristics
Symbol Parameter
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 1.4 4.5
Thermal Resistance, Case to Sink Typ 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5
FDP4N60NZ FDPF4N60NZ
A
o
C
o
C
Units
o
C/WR
©2011 Fairchild Semiconductor Corporation
FDP4N60NZ / FDPF4N60NZ Rev.C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP4N60NZ FDP4N60NZ TO-220 50
FDPF4N60NZ FDPF4N60NZ TO-220F 50
FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250μA, Referenced to 25oC-0.6-V/
D
V
= 600V, V
DS
= 480V, V
V
DS
= 0V - - 1
GS
= 0V, TC = 125oC- - 10
GS
= 0V - - ±10 μA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 1.9A - 1.9 2.5 Ω
= 20V, ID = 1.9A (Note 4)
Forward Transconductance
V
DS
-3.3-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 40 60 pF
Reverse Transfer Capacitance - 3.7 5 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 2.1 - nC
Gate to Drain “Miller” Charge - 3.3 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 15.1 40.2 ns
Turn-Off Delay Time - 30.2 70.4 ns
Turn-Off Fall Time - 12.8 35.6 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 480V ID = 3.8A
DS
V
= 10V
GS
(Note 4, 5)
= 300V, ID = 3.8A
V
DD
R
= 25Ω
G
(Note 4, 5)
- 385 510 pF
- 8.3 10.8 nC
-12.735.4ns
μA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 31mH, IAS = 3.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 3.8A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP4N60NZ / FDPF4N60NZ Rev.C0
Maximum Continuous Drain to Source Diode Forward Current - - 3.8 A
Maximum Pulsed Drain to Source Diode Forward Current - - 15 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.7 - μC
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 3.8A - - 1.4 V
SD
= 3.8A
SD
2
- 168 - ns
www.fairchildsemi.com
Typical Performance Characteristics
2468
0.1
1
10
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 10 30
0.02
0.1
1
10
20
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
0.0 1.5 3.0 4.5 6.0 7.5 9.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.00.40.81.21.6
0.1
1
10
40
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.01.53.04.56.07.59.0
0
2
4
6
8
10
*Note: ID = 3.8A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gat e C harge [nC]
0.1 1 10 30
1
10
100
700
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP4N60NZ / FDPF4N60NZ Rev.C0
3
www.fairchildsemi.com
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