Fairchild FDP46N30 service manual

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FDP46N30

300V N-Channel MOSFET

FDP46N30 300V N-Channel MOSFET

August 2005

TM

UniFET

Features

• 46A, 300V, R

• Low gate charge (typical 58 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

(typical 60 pF)

rss

= 0.079Ω @VGS = 10 V

DS(on)

G

D

S

TO-220

FDP Series

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switched mode power supplies and active power factor
correction.

D

{

{

z

z









z

{

{

G

z
z

z

{

{

S

Absolute Maximum Ratings

Symbol Parameter FDP46N30 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 300 V

Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

46

27.6

184 A

1205 mJ

46 A

41.7 mJ

4.5 V/ns

417

3.3

300 °C

A
A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

©2005 Fairchild Semiconductor Corporation

FDP46N30 Rev. A

Thermal Resistance, Junction-to-Case -- 0.30 °C/W

Thermal Resistance, Case-to-Sink 0.5 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP46N30 FDP46N30 TO-220 - - 50

FDP46N30 300V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless other wise not ed

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.95mH, I

3. ISD ≤ 46A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 300 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.3--V/°C

D

= 240V, TC = 125°C

V

DS

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V

Static Drain-Source
On-Resistance

Forward Transconductance VDS = 40V, ID = 23A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 500 650 pF

V

= 10V, ID = 23A -- 0.067 0.079 Ω

GS

(Note 4)

-- 37 -- S

-- 2600 3380 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 60 90 pF

Turn-On Delay Time VDD = 150V, ID = 46A

R

= 25Ω

Turn-On Rise Time -- 216 442 ns

G

-- 41 92 ns

Turn-Off Delay Time -- 124 258 ns

Turn-Off Fall Time -- 171 352 ns

Total Gate Charge VDS = 240V, ID = 46A

= 10V

V

Gate-Source Charge -- 20 -- nC

GS

Gate-Drain Charge -- 28 -- nC

(Note 4, 5)

-- 58 75 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 46 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 184 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 46A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 46A

/dt =100A/µs

dI

Reverse Recovery Charge -- 3.9 -- µC

= 46A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

F

(Note 4)

-- 315 -- ns

FDP46N30 Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDP46N30 300V N-Channel MOSFET

-55°C

* Notes :

1. V

2. 250

DS

10

10

, Drain Current [A]

D

I

10

V

2

Top : 15.0 V
10 .0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

1

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

2

10

* Notes :

1. 250

2. T

1

10

µ

s Pulse Test

= 25°C

C

1

10

, Drain Cur rent [A]

D

I

10

150°C

25°C

0

24681012

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.13

0.12

0.11

0.10

],

Ω

[

0.09

DS(ON)

R

0.08

0.07

Drain-Source On-R esistance

0.06

0.05
0 25 50 75 100 125

VGS = 10V

ID, Drai n Current [A]

VGS = 20V

* Note : TJ = 25°C

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150°C

VSD, Source-Drain voltage [V]

25°C

* Notes :

1. V

= 0V

GS

2. 250

µ

= 40V

µ

s Pulse Test

s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

4000

2000

Capacitances [pF]

0

-1

10

FDP46N30 Rev. A

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

* Note ;

1. V

2. f = 1 MHz

1

10

= 0 V

GS

3

12

10

8

VDS = 60V

VDS = 150V

VDS = 240V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060

QG, Total Gate Charge [nC]

* Note : ID = 46A

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