Fairchild FDP3672 service manual

FDP3672

N-Channel PowerTrench® MOSFET
105V, 41A, 33mΩ

FDP3672

September 2003

Features

•r

•Q

• Low Miller Charge

•Low Q

• Optimized eff iciency at high frequ encies

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

= 25mΩ (Typ.), V

DS(ON)

(tot) = 28nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 41A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Pow er Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Re ctifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Lo ad Control

• Electronic Valve T rain System s

Formerly developmental type 82760

D

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T

C

SOURCE

DRAIN

GATE

= 25°C unless otherwise noted

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 105 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 31 A

C

= 25oC, VGS = 10V, R

amb

= 62oC/W) 5.9 A

θJA

41 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 48 mJ
Power dissipation 135 W
Derate above 25

o

C0.9W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristi cs

R

θJC

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

©2003 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-220 1.11
Thermal Resistance Junction t o Ambient TO-220 (No te 2) 62

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

FDP3672 Rev. A3

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP3672 FDP3672 TO-220AB Tube N/A 50 units

FDP3672

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 105 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC= 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

Drain to Source On Resistance

= 41A, V

D

I

= 21A, VGS = 6V, - 0.031 0.055

D

I

= 41A, V

D

T

= 175oC

C

= 10V - 0.025 0.033

GS

= 10V ,

GS

- 0.063 0.070

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 240 - pF
Reverse Transfer Capacitance - 55 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 3.9 5 nC
Gate to Source Gate Charge - 12 - nC
Gate Charge Threshold to Plateau - 8.0 - nC

V

DD

I

= 41A

D

I

= 1.0m A

g

= 50V

Gate to Drain “Miller” Charge - 6.5 - nC

-1670- pF

-2837nC

µA

Ω

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 12 - ns
Rise Time - 48 - ns
T u rn-Off Delay Time - 24 - ns
Fall Time - 27 - ns
Turn-Off Time - - 77 ns

(VGS = 10V)

V

DD

V

GS

--90ns

= 50V, ID = 41A
= 10V, RGS = 11.0Ω

Drain-Source Diode Characteristics

I

= 41A - - 1 .25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

©2003 Fairchild Semiconductor Corporation FDP3672 Rev. A3

Source to Drain Di ode Voltage
Reverse Recovery Time ISD = 41A, dISD/dt =100A/µs- - 39ns

Reverse Recovered Charge ISD = 41A, dISD/dt =100A/µs- - 42nC

= 25°C, L = 0.11mH, IAS = 30A.

J

SD

= 21A - - 1.0 V

I

SD

FDP3672

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

150

50

V

= 10V

GS

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Curr ent vs

Case Temperature

, NORMALIZED
Z

, PEAK CURRENT (A)
I

θJC

DM

THERMAL IMPEDANCE

500

100

30

0.1

0.01

10

-5

10

VGS = 10V

-5

SINGLE PULSE

-4

10

-3

10

-2

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

-1

10

TC = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

P

DM

1/t2

x R

θJC

0

10

o

25

0

10

t

1

t

2

+ T

θJC

C

C DERATE PEAK

175 - T

C

150

1

10

1

10

Figure 4. Peak Current Capability

©2003 Fairchild Semiconductor Corporation FDP3672 Rev. A3