Fairchild FDP3651U service manual
FDP3651U
N-Channel PowerTrench
100V, 80A, 15mΩ
®
MOSFET
FDP3651U N-Channel PowerTrench
July 2006
Features
•r
•Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse/Repetitive Pulse)
MOSFET Maximum Ratings T
V
V
I
P
E
T
T
=13 mΩ(Typ.), VGS = 10V, ID = 40A
DS(on)
=49 nc(Typ.), VGS = 10 V
g(TOT)
Body Diode
rr
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
Symbol Parameter Ratings Units
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 80
-Pulsed (Note 1)
Power Dissipation 255 W
Single Pulsed Avala nche Energy (Note 2) 266 mJ
Operating and Storage Temperature -55 to 175 °C
Maximum lead temperature soldering purposes,
1/8” from case for 5 seconds
D
DSS
GSS
D
AS
, T
J
L
STG
SOURCE
DRAIN
GATE
= 25°C unless otherwise noted
C
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
320
300 °C
®
MOSFET
A
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance , Junction to Ambient 62 °C/W
Thermal Resistance , Junction to Case 0.59 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDP3651U FDP3651U Tube N/A 50 units
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. A
www.fairchildsemi.com1
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
I
DSS
I
GSS
DSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V
Zero Gate Voltage Drain Current
V
V
DS
GS
= 80V
= 0V
=150°C - - 250 µA
T
C
- - 1 µA
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA 3.5 4.5 5.5 V
V
= 10V , ID = 80A - 15 18
GS
Drain to Source On Resistance
= 10V , ID = 40A - 13 15
GS
=10V, ID=40A,TJ=175oC - 32 37
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 485 728 pF
Reverse Transfer Capacitance - 89 11 8 pF
= 25V,VGS = 0V
V
DS
f=1MHz
Total Gate Charge VGS = 0V to 10V
= 50V
V
Threshold Gate Charge VGS = 0V to 2V - 7 9.8 nC
Gate to Source Gate Charge - 23 - nC
DD
I
= 80A
D
- 4152 5522 pF
- 49 69 nC
Gate to Drain Charge - 16 - nC
FDP3651U N-Channel PowerTrench
mΩV
®
MOSFET
Resistive Switching Characteristics
t
(on)
t
d(on)
t
r
t
d(off)
t
f
t
(off)
Turn-On Time
Turn-On Delay Time - 15 27 ns
Rise Time - 16 29 ns
Turn-Off Delay Time - 32 52 ns
Fall Time - 14 26 ns
Turn-Off Time - - 78 ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. Pulse Test:Pulse Width<300us,Duty Cycle<2.0%
2. L=0.13mH, I
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge - 202 303 nC
= 64A, VDD=50V, RG=25 Ω , Starting TJ=25oC
AS
- - 64 ns
V
= 50V, ID = 80A
DD
V
= 10V, RGS = 5.0Ω
GS
I
= 80A - 0.99 1.25 V
SD
= 40A - 0.88 1.0 V
I
SD
= 40 A, di/dt = 100A/µs
I
s
- 70 105 ns
FDP3651U Rev. A
www.fairchildsemi.com2
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