Fairchild FDP2710 service manual

tm

FDP2710

D

G

S

TO-220

G

S

D

250V N-Channel PowerTrench MOSFET

FDP2710 250V N-Channel PowerTrench MOSFET

November 2007

General Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process
cially tailored to minimize the on-state resistance and yet
maint

ain superior switching performance.

that has been espe-

Description

• 50A, 250V, R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

•RoHS compliant

= 36.3mΩ @VGS = 10 V

DS(on)

Application

• PDP application

Absolute Maximum Ratings

Symbol Parameter Ratings Unit

V

DS

V

GS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 250 V

Gate-Source voltage ± 30 V

Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed

Single Pulsed Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

50

31.3

See Figure 9

145 mJ

260

2.1

300 °C

DS(on)

A
A

A

W

W/°C

Thermal Characteristics

Symbol Parameter Min Max Unit

R

θJC

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP2710 Rev. A

Thermal Resistance, Junction-to-Case -- 0.48 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Widt h Quantity

FDP2710 FDP2710 TO-220 - - 50

FDP2710 250V N-Channel PowerTrench MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

= 250μA, Referenced to 25°C -- 0.25 -- V/°C

I

D

= 250V, VGS = 0V,TC = 125°C

V

DS

--

--

--

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 4.0 5.0 V

Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ

Forward Transconductance VDS = 10V, ID = 25A

Input Capacitance

= 25V, VGS = 0V,

V

Output Capacitance -- 426 570 pF

DS

f = 1.0MHz

(Note 4)

-- 63 -- S

-- 5470 7280 pF

Reverse Transfer Capacitance -- 97 146 pF

Turn-O n Delay Time

= 125V, ID = 50A

V

Turn-O n Ris e Ti me -- 252 515 ns

Turn-O ff Delay Time -- 112 235 ns

Turn-O ff Fall Time -- 154 320 ns

DD

V

GS

= 10V, R

GEN

= 25Ω

(Note 4, 5)

Total Gate Charge

V

= 125V, ID = 50A

Gate-Source Charge -- 34 -- nC

Gate-Drain Charge -- 18 -- nC

V

DS

GS

= 10V

(Note 4, 5)

-- 80 170 ns

-- 78 101 nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A -- -- 1.2 V

Reverse Recovery Time VGS = 0V, IS = 50A

/dt =100A/μs (Note 4)

dI

Reverse Recovery Charge -- 1.3 -- μC

F

-- 163 -- ns

10

500μAμA

Notes:

1. Repetitive Rating: Pulse width limited

2. L = 1mH, I

3. ISD ≤ 50A, di/dt ≤ 100A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300

5. Essentially Independent of Operating Temperature Typical Characteristics

= 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

by maximum junction temperature

, Starting TJ = 25°C

DSS

μs, Duty Cycle ≤ 2%

FDP2710 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

500

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

100

6.5 V

6.0 V
Bottom : 5.5 V

10

,Drain Current[A]

D

I

* Notes :

μs Pulse Test

1. 250

= 25oC

2. T

1

0.1 1 10

VDS,Drain-Source Voltage[V]

C

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current

0.07

0.06

250

100

150oC

10

,Drain Current[A]

D

I

1

46810

25oC

-55oC

* Notes :

1. V

DS

2. 250

= 20V

μs Pulse Test

VGS,Gate-Source Voltage[V]

and Temperature

150

* Notes :

100

1. V

2. 250

=0V

GS

μs Pulse Test

FDP2710 250V N-Channel PowerTrench MOSFET

0.05

[Ω],

0.04

DS(ON)

R

VGS = 10V

VGS = 20V

0.03

Drain-Source On-Resistance

0.02
0 25 50 75 100 125 150

* Note : TJ = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

TA = 150oC

1

0.20.40.60.81.01.2

TA = 25oC

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitances [pF]

9000

6000

3000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

gd

0

-1

10

VDS, Drain-Source Voltage [V]

gd

C

iss

C

oss

* Note:

1. V

= 0V

C

rss

0

10

GS

2. f = 1MHz

1

10

30

10

VDS = 50V

V

= 125V

8

V

DS

DS

= 200V

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 1020304050607080

* Note : ID = 50A

Qg, Total Gate Charge [nC]

FDP2710 Rev. A

3 www.fairchildsemi.com