Fairchild FDP26N40, FDPF26N40 service manual

tm

FDP26N40 / FDPF26N40

N-Channel MOSFET

400V, 26A, 0.16Ω

FDP26N40 / FDPF26N40 N-Channel MOSFET

February 2008

TM

UniFET

Features

•R

• Low gate charge ( Typ. 48nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A

DS(on)

( Typ. 30pF)

rss

G

D

S

Symbol Parameter FDP26N40 FDPF26N40 Units

Drain to Source Voltage 400 V
Gate to Source Voltage ±30 V

Drain Current
Drain Current - Pulsed (Note 1) 104 104* A

Single Pulsed Avalanche Energy (Note 2) 1352 mJ
Avalanche Current (Note 1) 26 A
Repetitive Avalanche Energy (Note 1) 26.5 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220
FDP Series

C

= 25

D

G

S

o

C unless otherwise noted*

-Continuous (T

-Continuous (T

(T

= 25oC) 265 40 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.

D

G

TO-220F
FDPF Series

= 25oC) 26 26*

C

= 100oC) 15.6 15.6*

C

o

C2.00.3W/

300

S

o

o

Thermal Characteristics

Symbol Parameter FDP26N40 FDPF26N40 Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.5 3.0
Thermal Resistance, Case to Sink Typ. 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

o

C/WR

A

o

C

C
C

©2008 Fairchild Semiconductor Corporation
FDP26N40 / FDPF26N40 Rev. A

www.fairchildsemi.com1

FDP26N40 / FDPF26N40 N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP26N40 FDP26N40 TO-220 - - 50

FDPF26N40 FDPF26N40 TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 400 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.5-V/

D

V

= 400V, V

DS

= 320V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 13A - 0.13 0.16 Ω
Forward Transconductance VDS = 20V, ID = 13A (Note 4) - 25.5 - S

Input Capacitance
Output Capacitance - 390 520 pF
Reverse Transfer Capacitance - 30 45 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 320V, ID = 26A

Gate to Source Gate Charge - 15 - nC
Gate to Drain “Miller” Charge - 20 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 2400 3185 pF

-4860nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 100 210 ns
Turn-Off Delay Time - 115 240 ns
Turn-Off Fall Time - 66 140 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 4mH, I
3: I

≤ 26A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 26 A
Maximum Pulsed Drain to Source Diode Forward Current - - 104 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 5.17 - µC

= 26A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 200V, ID = 26A

V

DD

R

= 25Ω

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 26A - - 1.4 V

SD

= 26A

SD

- 45 100 ns

- 406 - ns

FDP26N40 / FDPF26N40 Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

70

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

10

6.0 V

5.5 V

1

,Drain Current[A]

D

I

*Notes:

µs Pulse Test

1. 250

2. T

= 25oC

0.1

0.02

0.1 1 10

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.35

100

25oC

-55oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

10

,Drain Current[A]

D

I

1

456789

150oC

VGS,Gate-Source Voltage[V]

100

FDP26N40 / FDPF26N40 N-Channel MOSFET

0.30

150oC

0.25

[Ω],

0.20

DS(ON)

R

VGS = 10V

0.15

VGS = 20V

Drain-Source On-Resistance

0.10
0 20406080

*Note: TJ = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

1

0.2 0.6 1.0 1.4

VSD, Body Diode Forward Voltage [V]

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

4000

3000

2000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

C

C

Capacitances [pF]

1000

0

0.1 1 10

C

VDS, Drain-Source Voltage [V ]

oss

rss

gd

gd

*Note:

= 0V

1. V

GS

iss

2. f = 1MH z

30

10

8

VDS = 100V
V

= 200V

DS

= 320V

V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 1020304050

*Note: ID = 26A

Qg, Total Gate Char g e [nC]

FDP26N40 / FDPF26N40 Rev. A

3

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