Fairchild FDP2670, FDB2670 service manual

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FDP2670/FDB2670

200V N-Channel PowerTrench



MOSFET

FDP2670

November 2001

FDB2670

General Description

This N-Channel MOSFET has been designed
specifically for switching on the primary side in the
isolated DC/DC converter application. Any applicat ion
requiring a 200V MOSFETs with low on-resistance and
fast switching will benefit.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable

specifications.

RDS

(ON)

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

G

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

S

=25oC unless otherwise noted

A

Features

• 19 A, 200 V. R

• Low gate charge (27 nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

D

= 130 mΩ @ VGS = 10 V

DS(ON)

G

D

TO-263AB

FDB Series

S

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns
TJ, T

STG

Drain-Source Voltage 200 V
Gate-Source Voltage
Drain Current – Continuous (Note 1) 19 A

– Pulsed (Note 1) 40 A

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range –65 to +175

± 20

93 W

0.63

W°/C

V

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 1.6
Thermal Resistance, Junction-to-Ambient 62.5

°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB2670 FDB2670 13’’ 24mm 800 unit s
FDP2670 FDP2670 Tube n/a 45 units

2001 Fairchild Semiconductor Corporation

FDP2670/FDB2670 Rev C1(W)

FDP2670

/

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source
Avalanche Energy

Maximum Drain-Source Avalanche
Current

VDD = 100 V, ID = 10 A

375

10 A

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

200 V

241

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

V

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 10 A

= 10V, ID = 10 A, TJ = 125°C

V

GS

On–State Drain Current VGS = 10 V, VDS = 10 V 20 A
Forward Transconductance VDS = 10 V, ID = 10 A 24 S

244.5V
–9
98

205

130
285

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1320 pF
Output Capacitance 71 pF
Reverse Transfer Capacitance

= 100 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

24 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 14 25 ns
Turn–On Rise Time 5 10 ns

= 100 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 26 41 ns
Turn–Off Fall Time
Total Gate Charge 27 38 nC
Gate–Source Charge 7 nC

V

= 100 V, ID = 10 A,

DS

= 10 V

V

GS

Gate–Drain Charge

23 37 ns

10 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. Calculated continuous current based on maximum allowable junction temperature.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BV

3. I

SD

Maximum Continuous Drain–Source Diode Forward Current 19 A
Drain–Source Diode Forward

Voltage

, Starting TJ = 25°C

DSS

V

= 0 V, IS = 10 A (Note 2) 0.8 1.3 V

GS

FDB2670

mJ

µA

FDP2670/FDB2670 Rev C1(W)