Fairchild FDP24N40 service manual

tm

FDP24N40

D

G

S

TO-220
FDP Series

G

S

D

N-Channel MOSFET

400V, 24A, 0.175Ω

FDP24N40 N-Channel MOSFET

April 2012

TM

UniFET

Features

•R

• Low gate charge ( Typ. 46nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improve dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A

DS(on)

( Typ. 25pF)

rss

= 25oC unless otherwise noted

C

Symbol Parameter FDP24N40 Units

Drain to Source Voltage 400 V
Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 227 W

C

- Derate above 25

STG

D r a i n C urrent
Drain Current - Pulsed (Note 1) 96 A

Single Pulsed Avalanche Energy (Note 2) 1296 mJ
Avalanche Current (Note 1) 24 A
Repetitive Avalanche Energy (Note 1) 22.7 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.

= 25oC) 24

C

= 100oC) 14.4

C

o

C1.8W/

300

o

o

Thermal Characteristics

Symbol Parameter FDP24N40 Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.55
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5

o

C/WR

A

o

C

C
C

©2012 Fairchild Semiconductor Corporation
FDP24N40 Rev. C0

www.fairchildsemi.com1

FDP24N40 N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP24N40

FDP24N40 TO-220 - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

/ ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 400 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC-0.4-V/

D

V

= 400V, V

DS

= 320V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 12A - 0.140 0.175 Ω
Forward Transconductance VDS = 20V , ID = 12A (Note 4) -34-S

Input Capacitance
Output Capacitance - 365 490 pF
Reverse Transfer Capacitance - 25 38 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 320V, ID = 24A

Gate to Source Gate Charge - 12 - nC
Gate to Drain “Miller” Charge - 20 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 2270 3020 pF

-4660nC

μA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 90 190 ns
Turn-Off Delay Time - 110 230 ns
Turn-Off Fall Time - 65 140 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 4.5mH, I
≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 24 A
Maximum Pulsed Drain to Source Diode Forward Current - - 96 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 4.7 - μC

= 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 200V, ID = 24A

V

DD

R

= 25Ω

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 24A - - 1.4 V

SD

= 24A

SD

-4090ns

- 360 - ns

FDP24N40 Rev. C0

2

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Typical Performance Characteristics

0.1 1

1

10

8

0.05

50

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0V

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

0.2

45678

1

10

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

-55oC

150oC

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

70

0.2

0 1020304050

0.12

0.14

0.16

0.18

*Note: TJ = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.19

0.2 0.6 1.0 1.4

1

10

100

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Volta ge [V]

25oC

200

0 1020304050

0

2

4

6

8

10

*Note: ID = 24A

VDS = 100V
V

DS

= 200V

V

DS

= 320V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te C harge [nC]

0.1 1 10

0

1000

2000

3000

4000

5000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V ]

30

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP24N40 N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP24N40 Rev. C0

3

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