Fairchild FDP22N50N service manual

FDP22N50N

N-Channel MOSFET

500V, 22A, 0.22Ω

FDP22N50N N-Channel MOSFET

April 2009

TM

UniFET

Features

•R

• Low gate charge ( Typ. 49nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improve dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.185Ω ( Typ.)@ VGS = 10V, ID = 11A

DS(on)

( Typ. 24pF)

rss

G

D

S

Symbol Parameter FDP22N50N Units

Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V

D r a i n C urrent
Drain Current - Pulsed (Note 1) 88 A

Single Pulsed Avalanche Energy (Note 2) 1000 mJ
Avalanche Current (Note 1) 22 A
Repetitive Avalanche Energy (Note 1) 31.25 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220
FDP Series

C

= 25oC unless otherwise noted

-Continuous (T

-Continuous (T

(T

= 25oC) 312.5 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.

D

G

S

= 25oC) 22

C

= 100oC) 13.2

C

o

C2.5W/

300

o

o

Thermal Characteristics

Symbol Parameter FDP22N50N Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5

o

C/WR

A

o

C

C
C

©2009 Fairchild Semiconductor Corporation
FDP22N50N Rev. A

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP22N50N

FDP22N50N TO-220 - - 50

FDP22N50N N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, 500 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC - 0.45 - V/oC

D

V

= 500V, V

DS

= 400V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.185 0.22 Ω
Forward Transconductance VDS = 20V, ID = 11A - 24.4 - S

Dynamic Characteristics

C
C
C
Q
Q

Q

iss
oss
rss
g(tot)
gs

gd

Input Capacitance
Output Capacitance - 351 460 pF
Reverse Transfer Capacitance - 24 50 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 15 - nC

Gate to Drain “Miller” Charge - 19 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 50 110 ns
Turn-Off Delay Time - 48 110 ns
Turn-Off Fall Time - 35 80 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 400V, ID = 22A

DS

V

= 10V

GS

(Note 4)

= 250V, ID = 22A

V

DD

R

= 4.7Ω

G

(Note 4)

- 2456 3200 pF

-4965nC

-2255ns

µA

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 4.1mH, I
≤ 22A, di/dt ≤ 200A/µs, VDD ≤ BV

3. I

SD

4. Essentially Independent of Operating Temperature Typical Characteristics

FDP22N50N Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 22 A
Maximum Pulsed Drain to Source Diode Forward Current - - 88 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 6.5 - µC

= 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs

F

= 22A - - 1.4 V

SD

= 22A

SD

2

- 472 - ns

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Typical Performance Characteristics

FDP22N50N N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

50

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

10

6.0 V

5.5 V

,Drain Current[A]

D

1

I

0.2

0.1 1 10

0.05
VDS,Drain-Source Voltage[V]

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

100

*Notes:

= 20V

1. V

DS

2. 250

µs Pulse Test

10

150oC

1

,Drain Current[A]

D

I

0.1
345678

25oC

-55oC

VGS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.30

0.25

[Ω],

DS(ON)

R

0.20

VGS = 10V

100

150oC

25oC

VGS = 20V

10

Drain-Source On-Resistance

0.15
0 1020304050

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

4000

3000

2000

Capacitances [pF]

1000

0

0.1 1 10

FDP22N50N Rev. A

*Note: TJ = 25oC

ID, Drain Current [A]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

C

oss

C

iss

C

rss

rss

= C

gd

gd

VDS, Drain-Source Voltage [V ]

*Note:

= 0V

1. V

GS

2. f = 1MH z

, Reverse Drain Current [A]

S

I

1

0.2 0.6 1.0 1.4

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

VSD, Body Diode Forward Voltage [V]

10

VDS = 100V
V

= 250V

8

V

DS

= 400V

DS

6

, Gate-Source Voltage [V]

GS

V

4

2

*Note: ID = 22A

0

30

0 1020304050

Qg, Total G a te C harge [nC]

3

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