Fairchild FDH20N40, FDP20N40 service manual
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FDH20N40 / FDP20N40
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
FDH20N40 / FDP20N40
October 2002
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Features
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced r
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
DS(ON)
• 175°C Rated Junction Temperature
Package
JEDEC TO-247
SOURCE
DRAIN
(FLANGE)
Absolute Maximum Ratings T
JEDEC TO-220AB
DRAIN
GATE
DRAIN
(FLANGE)
= 25°C unless otherwise noted
C
SOURCE
DRAIN
GATE
Symbol
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 400 V
Gate to Source Voltage ±30 V
Drain Current
I
D
P
D
, T
T
J
STG
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature -55 to 175
= 25oC, VGS = 10V)
C
= 100oC, VGS = 10V) 14 A
C
(Note 1) 80 A
o
C
20 A
273
1.82
Soldering Temperature for 10 seconds 300 (1.6mm from case)
Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)
D
G
S
W
W/oC
o
C
o
C
Thermal Characteristics
R
R
R
R
©2002 Fairchild Semiconductor Corporation
Thermal Resistance Junction to Case 0.55
θJC
Thermal Resistance Case to Sink, Flat, Greased Surface 0.24
θCS
Thermal Resistance Junction to Ambient (TO-247) 40
θJA
Thermal Resistance Junction to Ambient (TO-220) 62
θJA
o
C/W
o
C/W
o
C/W
o
C/W
FDH20N40 / FDP20N40 Rev. A,
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDH20N40 FDH20N40 TO-247 Tube - 30
FDP20N40 FDP20N40 TO-220 Tube - 50
FDH20N40 / FDP20N40
Electrical Characteristics
TC = 25°C (unless otherwise noted)
Symbol Parameter Tes t C onditions Min Typ Max Units
Statics
B
VDSS
∆B
VDSS
r
DS(ON)
V
GS(th)
I
DSS
I
GSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 400 - - V
/∆TJBreakdown Voltage Temp. Coefficient
V/°C Reference to 25°C
I
= 1mA
D
-0.43-
Drain to Source On-Resistance VGS = 10V, ID = 10A - 0.200 0.216 Ω
Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.5 4.0 V
V
= 400V TC = 25oC- - 25
Zero Gate Voltage Drain Current
DS
= 0V TC =150oC - - 250
V
GS
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
Dynamics
g
fs
Q
g(TOT)
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
Forward Transconductance VDS = 50V, ID = 10A 10 - - S
Total Gate Charge at 10V
Gate to Source Gate Charge - 10 12 nC
Gate to Drain “Miller” Charge - 12 14.4 nC
Tur n-On Delay Time
Rise Time - 32.5 - ns
Turn-Off Delay Time - 30 - ns
Fall Time - 34 - ns
Input Capacitance
Output Capacitance - 245 - pF
Reverse Transfer Capacitance - 18 - pF
V
= 10V
GS
V
= 320V
DS
= 20A
I
D
= 200V
V
DD
= 20A
I
D
= 10Ω
R
G
R
= 15.4Ω
D
= 25V, VGS = 0V
V
DS
f = 1MHz
-3542nC
- 12.4 - ns
-1840- pF
µA
Avalanche Characteristics
E
AS
I
AR
Single Pulse Avalanche Energy (Note 2) 1100 - - mJ
Avalanche Current - - 20 A
Drain-Source Diode Characteristics
Continuous Source Current
I
S
(Body Diode)
I
SM
V
t
Q
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T
©2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev. A
Pulsed Source Current (Note 1)
(Body Diode)
Source to Drain Diode Voltage I
SD
Reverse Recovery Time ISD = 20A, dISD/dt = 100A/µs - 351 456 ns
rr
Reverse Recovered Charge ISD = 20A, dISD/dt = 100A/µs - 4.5 5.85 µC
RR
= 25°C, L = 5.5mH, IAS = 20A
J
MOSFET symbol
showing the
integral reverse
p-n junction diode.
= 20A - 0.9 1.2 V
SD
D
G
S
--20A
--80A
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