Fairchild FDP17N60N, FDPF17N60NT service manual

FDP17N60N / FDPF17N60NT N-Channel MOSFET

UniFET

FDP17N60N / FDPF17N60NT

N-Channel MOSFET

600V, 17A, 0.34Ω

Features

•R

• Low Gate Charge ( Typ. 48nC)

•Low C

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

•RoHS Compliant

= 0.29Ω ( Typ.)@ VGS = 10V, ID = 8.5A

DS(on)

( Typ. 23pF)

rss

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

July 2009

TM

G

TO-220

G D S

FDP Series

MOSFET Maximum Ratings T

Symbol Parameter FDP17N60N FDPF17N60NT Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns

P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 68 68* A

Single Pulsed Avalanche Energy (Note 2) 838 mJ

Avalanche Current (Note 1) 17 A

Repetitive Avalanche Energy (Note 1) 24.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

D

G

S

= 25oC unless otherwise noted*

C

-Continuous (T

(T

= 25oC) 245 62.5 W

C

- Derate above 25

TO-220F FDPF Series

S

= 25oC) 17 17*

C

= 100oC) 10.2 10.2*

C

o

C2.00.5W/

300

o

Thermal Characteristics

Symbol Parameter

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case 0.51 2.0

Thermal Resistance, Case to Heat Sink Typ. - -

Thermal Resistance, Junction to Ambient 62.5 62.5

FDP17N60N FDPF17N60NT

Units

o

C/WR

A

o

C

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP17N60N FDP17N60N TO-220 - - 50

FDPF17N60NT FDPF17N60NT TO-220F - - 50

FDP17N60N / FDPF17N60NT N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ∆BV

∆T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 600 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.8-V/

D

V

= 600V, V

DS

= 480V, V

V

DS

= 0V - - 1

GS

= 0V,TC = 150oC- - 10

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 8.5A - 0.29 0.34 Ω

= 20V, ID = 8.5A (Note 4)

Forward Transconductance

V

DS

-21-S

Dynamic Characteristics

C

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 310 410 pF

Reverse Transfer Capacitance - 23 35 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 13 - nC

Gate to Drain “Miller” Charge - 20 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 79 168 ns

Turn-Off Delay Time - 128 266 ns

Turn-Off Fall Time - 62 134 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 480V ID = 17A

DS

V

= 10V

GS

( Note 4 , 5)

= 300V, ID = 17A

V

DD

V

= 10V, R

GS

( Note 4 , 5)

GEN

= 25Ω

- 2285 3040 pF

-4865nC

- 48 106 ns

µA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 5.8mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 17A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDP17N60N/FDPF17N60NT Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 74 A

Maximum Pulsed Drain to Source Diode Forward Current - - 68 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 7.2 - µC

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 17A - - 1.4 V

SD

= 17A

SD

2

- 575 - ns

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Typical Performance Characteristics

FDP17N60N / FDPF17N60NT N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

200

V

= 15.0 V

GS

100

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10

5.0 V

, Drain Current[A]

1

D

I

0.1

0.1 1 10 20

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

VDS, Drain-Source Voltage[V]

100

10

, Drain Current[A]

D

I

1

456789

-55oC150oC

25oC

*Notes:

= 20V

1. V

DS

2. 250µs Pulse Test

VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.6

0.5

200

100

[Ω],

0.4

DS(ON)

R

VGS = 10V

VGS = 20V

10

150oC

25oC

0.3

, Reverse Drain Current [A]

Drain-Source On-Resistance

0.2 0 1020304050

*Note: TC = 25oC

ID, Drain Current [A]

S

I

1

0.2 0.4 0.8 1.2 1.4

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000

C

iss

10

VDS = 120V V

8

DS

V

DS

= 300V = 480V

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

1000

C

oss

6

*Note:

100

Capacitances [pF]

10

0.1 1 10 30

= 0V

1. V

GS

2. f = 1MHz

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

rss

= C

gd

VDS, Drain-Source Voltage [V]

C

rss

4

, Gate-Source Voltage [V]

GS

V

2

0

0 1020304050

*Note: ID = 17A

Qg, Total Gate Charge [nC]

FDP17N60N/FDPF17N60NT Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.18

1.15

1.10

1.05

3.0

2.5

2.0

FDP17N60N / FDPF17N60NT N-Channel MOSFET

1.00

, [Normalized]

DSS

0.95

BV

0.90

Drain-Source Breakdown Voltage

0.85

-75 -50 0 50 100 150 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

= 0V

GS

= 250µA

D

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-75 -50 0 50 100 150 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

GS

= 8.5A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

-FDPF17N60NT vs. Case Temperature

200 100

10

1

Operation in This Area is Limited by R

, Drain Current [A]

D

I

*Notes:

0.1

1. T

C

2. T

J

3. Single Pulse

0.01 1 10 100 1000

DS(on)

= 25oC

= 150oC

VDS, Drain-Source Voltage [V]

1ms

10ms

DC

10µs

100µs

20

15

10

, Drain Current [A]

D

I

5

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

-FDPF17N60NT

10

FDP17N60N/FDPF17N60NT Rev. A

]

JC

θ

Z

[

Thermal Response

0.003

0.1

0.01

1

10

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

P

DM

t

*Notes:

1. Z

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

1

t

2

(t) = 2.0oC/W Max.

θ

JC

1/t2

θ

JC

11010

(t)

2

Rectangular Pulse Duration [sec]

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDP17N60N / FDPF17N60NT N-Channel MOSFET

FDP17N60N/FDPF17N60NT Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

+

V

DS

_

L

LL

Same Type

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

Driver

G

DUT

I

SD

V

DD

FDP17N60N / FDPF17N60NT N-Channel MOSFET

V

GS

( D riv e r )

I

SD

( DUT )

V

DS

( DUT )

G ate P ulse W idth

--------------------------

D =

Gate Pulse Period

IFM, B ody Diode Forw ard C urrent

I

RM

Body D iode R everse C urrent

Body Diode Recovery dv/dt

V

SD

Body D iode

e D rop

Forw ard V olta

e D rop

di/dt

10V

V

DD

FDP17N60N/FDPF17N60NT Rev. A

6

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Mechanical Dimensions

FDP17N60N / FDPF17N60NT N-Channel MOSFET

TO-220

FDP17N60N/FDPF17N60NT Rev. A

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Package Dimensions

FDP17N60N / FDPF17N60NT N-Channel MOSFET

TO-220F Potted

* Front/Back Side Isolation Voltage : 4000V

FDP17N60N/FDPF17N60NT Rev. A

Dimensions in Millimeters

8

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TRADEMARKS

®

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

®

*

®

F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

PDP SPM™ Power-SPM™

®

SM

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

®

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

™

®

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

®

µSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDP17N60N / FDPF17N60NT N-Channel MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

FDP17N60N/FDPF17N60NT Rev. A

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Fairchild FDP17N60N, FDPF17N60NT service manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FDP17N60N / FDPF17N60NT

Thermal Characteristics

Package Marking and Ordering Information