Fairchild FDP16N50U, FDPF16N50UT service manual

tm

October 2009

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

UniFET

FDP16N50U / FDPF16N50UT

N-Channel MOSFET, FRFET

500V, 15A, 0.48

FDP16N50U / FDPF16N50UT N-Channel MOSFET

TM

Features

•R

• Low gate charge ( Typ. 32nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A

DS(on)

( Typ. 20pF)

rss

Symbol Parameter FDP16N50U FDPF16N50UT Units

Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V

Drain Current
Drain Current - Pulsed (Note 1) 60 60* A

Single Pulsed Avalanche Energy (Note 2) 610 mJ
Avalanche Current (Note 1) 15 A
Repetitive Avalanche Energy (Note 1) 20 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 200 38.5 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switching mode power supplies and active power factor
correction.

= 25oC) 15 15*

C

= 100oC) 9 9*

C

o

C 1.59 0.3 W/oC

300

o

o

Thermal Characteristics

Symbol Parameter FDP16N50U FDPF16N50UT Units

R

JC
CS

R

JA

Thermal Resistance, Junction to Case 0.63 3.3
Thermal Resistance, Junction to Ambient 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

o

C/WR

A

C
C

©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. A1

www.fairchildsemi.com1

FDP16N50U / FDPF16N50UT N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP16N50U FDP16N50U TO-220 - - 50

FDPF16N50UT FDPF16N50UT TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

BV

DSS

T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250A, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 250

V

DS

= 0V - - 25

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250A3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 7.5A - 0.37 0.48 
Forward Transconductance VDS = 40V , ID = 7.5A (Note 4) -23-S

Input Capacitance
Output Capacitance - 235 310 pF
Reverse Transfer Capacitance - 20 30 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V, ID = 15A

Gate to Source Gate Charge - 8.5 - nC
Gate to Drain “Miller” Charge - 14 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 1495 1945 pF

-3245nC

A

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 150 310 ns
Turn-Off Delay Time - 65 140 ns
Turn-Off Fall Time - 80 170 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 5.5mH, I

3. ISD 16A, di/dt  200A/s, VDD  BV

4. Pulse Test: Pulse width  300s, Duty Cycle  2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 15 A
Maximum Pulsed Drain to Source Diode Forward Current - - 60 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.1 - C

= 15A, VDD = 50V, RG = 25, Starting TJ = 25C

AS

, Starting TJ = 25C

DSS

= 250V, ID = 15A

V

DD

R

= 25

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/s (Note 4)

F

= 15A - - 1.6 V

SD

= 15A

SD

-4090ns

-65-ns

FDP16N50U / FDPF16N50UT Rev.

2

www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

10

2

V

GS

Top : 1 5 .0 V
10 .0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bo tto m : 5 .5 V

* Note s :

1. 250

s P ulse Te st

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

24681012

10

0

10

1

150oC

25oC

* Note s :

1. V

DS

= 40V

2. 25 0

s Pulse Test

I

D

, Drain Current [A]

VGS, G a te -Sourc e Voltag e [V ]

0 5 10 15 20 25 30 35 40

0.2

0.3

0.4

0.5

0.6

VGS = 20V

VGS = 10V

* No te : TJ = 25oC

R

DS(ON)

[], Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

10

0

10

1

150oC

* Note s :

1. V

GS

= 0V

2. 250

s P ulse Te st

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

1000

2000

3000

4000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MH z

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 10203040

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

* No te : ID = 15A

V

GS

, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP16N50U / FDPF16N50UT N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP16N50U / FDPF16N50UT Rev.

3

www.fairchildsemi.com