Fairchild FDP15N65, FDPF15N65 service manual

FDP15N65 / FDPF15N65

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

650V N-Channel MOSFET

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

April 2007

TM

UniFET

Features

• 15A, 650V, R

• Low gate charge ( typical 48.5 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 23.6 pF)

rss

= 0.44Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

Absolute Maximum Ratings

Symbol Parameter FDP15N65 FDPF15N65 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

T

J, TSTG

T

L

* Drain current limited by maximum junction termperature.

Drain-Source Voltage 650 V

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 15 A

Repetitive Avalanche Energy (Note 1) 25.0 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

(Note 1)

(Note 2)

15

9.5

60 60*

637 mJ

250

2.0

300 °C

9.5*

38.5

15*

0.3

W/°C

Thermal Characteristics

A
A

A

W

Symbol Parameter FDP15N65 FDPF15N65 Unit

R

θJC

R

θCS

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP15N65 / FDPF15N65 Rev. B

Thermal Resistance, Junction-to-Case 0.5 3.3 °C/W

Thermal Resistance, Case-to-Sink 0.5 -- °C/W

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tap e Width Quantity

FDP15N65 FDP15N65 TO-220 -- -- 50

FDPF15N65 FDPF15N65 TO-220F -- -- 50

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

/ ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 650 -- -- V

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V

ID = 250μA, Referenced to 25°C -- 0.65 -- V/°C

VDS = 520V, TC = 125°C

--

--

--

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V

Static Drain-Source
On-Resistance

VGS = 10V, ID = 7.5A -- 0.36 0.44 Ω

Forward Transconductance VDS = 40V, ID = 7.5A (Note 4) -- 19.2 -- S

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 295 385 pF

f = 1.0MHz

-- 2380 3095 pF

Reverse Transfer Capacitance -- 23.6 35.5 pF

Turn-O n Delay Time VDD = 325V, ID = 15A

Turn-O n Rise Time -- 125 260 ns

RG = 21.7Ω

-- 65 140 ns

Turn-O ff Delay Tim e -- 105 220 ns

Turn-O ff Fall Time -- 65 140 ns

Total Gate Charge VDS = 520V, ID = 15A

Gate-Source Charge -- 14.0 -- nC

VGS = 10V

Gate-Drain Charge -- 21.2 -- nC

(Note 4, 5)

-- 48.5 63.0 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 15A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 15A

Reverse Recovery Charge -- 5.69 -- μC

dIF/dt =100A/μs (Note 4)

-- 496 -- ns

10

1

μA
μA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDP15N65 / FDPF15N65 Rev. B

2 www.fairchildsemi.com

Typical Performance Characteristics

24681012

10

0

10

1

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

0 1020304050

0.0

0.2

0.4

0.6

0.8

1.0

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

0

10

1

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drai n voltage [ V]

0 1020304050

0

2

4

6

8

10

12

VDS = 325V

VDS = 130V

VDS = 520V

* Note : ID = 15A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP15N65 / FDPF15N65 Rev. B

3 www.fairchildsemi.com