Fairchild FDP150N10A service manual

tm

FDP150N10A_F102

G

S

D

TO-220

G

S

D

N-Channel PowerTrench® MOSFET

100V, 50A, 15mΩ

FDP150N10A_F102 N-Channel PowerTrench

July 2011

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

•RoHS Compliant

= 12.5mΩ ( Typ.)@ VGS = 10V, ID = 50A

DS(on)

R

DS(on)

MOSFET Maximum Ratings T

Symbol Parameter FDP150N10A_F102 Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P

D

, T

T

J

STG

T

L

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 200 A

Single Pulsed Avalanche Energy (Note 2) 84.6 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted

C

- Continuous (T

- Continuous (T

(T

= 25oC) 91 W

C

- Derate above 25

Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

= 25oC) 50

C

= 100oC) 36

C

o

C0.61W/

300

o

o

®

MOSFET

A

o

C

C
C

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2011 Fairchild Semiconductor Corporation
FDP150N10A_F102 Rev. A1

Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient 62.5

Ratings

www.fairchildsemi.com1

Units

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP150N10A FDP150N10A_F102 TO-220 - - 50

FDP150N10A_F102 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.08 - V/oC

D

V

= 80V, V

DS

= 80V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 50A - 12.5 15.0 mΩ

= 10V , ID = 50A (Note 4)

Forward Transconductance

V

DS

-40-S

Dynamic Characteristics

C

iss

C

oss

C

rss

(er) Engry Related Output Capacitance VDS = 50V, VGS = 0V - 436 - pF

C

oss

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Input Capacitance
Output Capacitance - 267 355 pF
Reverse Transfer Capacitance - 11 - pF

= 50V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

= 50V, VGS = 10V

Gate to Source Gate Charge - 5.3 - nC
Gate Charge Threshold to Plateau - 2.6 - nC
Gate to Drain “Miller” Charge - 3.7 - nC

V

DS

I

= 50A

D

(Note 4, 5)

ESR Equivalent Series Resistance (G-S) Drain Open, f = 1MHz - 1.3 - Ω

- 1080 1440 pF

- 16.2 21.0 nC

μA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 16 42 ns
Turn-Off Delay Time - 21 52 ns
Turn-Off Fall Time - 5 20 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 2mH, I

3. ISD ≤ 100A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 50 A
Maximum Pulsed Drain to Source Diode Forward Current - - 200 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 55 - nC

= 9.2A, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 50V, ID = 50A

V

DD

V

= 10V, R

GS

(Note 4, 5)

= 0V, I

GS

V

= 0V, VDD = 50V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 4.7Ω

GEN

= 50A - - 1.3 V

SD

= 50A

SD

-1336ns

-50-ns

FDP150N10A_F102 Rev. A1

2

www.fairchildsemi.com

Typical Performance Characteristics

0.1 1 7

4

10

100

400

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

8.0V

6.5V

6.0V

5.5V

5.0V

234567

1

10

100

200

-55oC

175oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Vo lt a g e [V ]

0 50 100 150 200

0

10

20

30

40

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.0 0.5 1.0 1.5

1

10

100

400

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 100

5

10

100

1000

3000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz
C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V ]

0 5 10 15 20

0

2

4

6

8

10

*Note: ID = 50A

VDS = 20V
V

DS

= 50V

V

DS

= 80V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [n C ]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP150N10A_F102 N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP150N10A_F102 Rev. A1

3

www.fairchildsemi.com