Fairchild FDB14AN06LA0, FDP14AN06LA0 service manual

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FDB14AN06LA0 / FDP14AN06LA0

N-Channel PowerTrench® MOSFET 60V, 60A, 14.6mΩ

FDB14AN06LA0 / FDP14AN06LA0

January 2004

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 83557

MOSFET Maximum Ratings T

= 12.8mΩ (Typ.), V

DS(ON)

(tot) = 24nC (Typ.), V

g

Body Diode

RR

DRAIN

(FLANGE)

= 5V, ID = 60A

GS

= 5V

GS

TO-220AB

FDP SERIES

SOURCE

DRAIN

GATE

= 25°C unless otherwise not ed

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

GATE

SOURCE

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 25oC, VGS = 5V) 60 A

C

= 25oC, VGS = 5V, R

A

= 43oC/W) 10 A

θJA

67 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 46 mJ Power dissipation 125 W

o

Derate above 25

C0.83W/

Operating and Storage T emperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions an d environment dem anded by the au tomotive industry. For a

All Fairchild Semiconductor products are manufactu red, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-220,TO-263 1.2 Thermal Resistance Junction to Ambient TO-220, TO-263 ( Note 2) 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be fou nd a t: http://ww w.f airc hilds e m i.co m /pr oduc ts/dis c rete/reliab ility/ind ex.html.

certification.

FDB14AN06LA0 / FDP14AN06LA0 Rev. B

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB14AN06LA0 FDB14AN06LA0 TO-263AB 330mm 24mm 800 uni ts FDP14AN06LA0 FDP14A N06LA0 TO- 220AB Tube N/A 50 unit s

FDB14AN06LA0 / FDP14AN06LA0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Volt ag e ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

= 67A, VGS = 10V - 0.0102 0.0116

I

D

I

= 60A, VGS = 5V - 0.0128 0.0146

Drain to S ou r c e On Re si st ance

D

= 60A, VGS = 5V,

I

D

T

= 175oC

J

- 0.028 0.033

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitanc e - 270 - pF Reverse Transfer Capacitance - 115 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 5V VGS = 0V to 5V Threshold Gate Charge VGS = 0V to 1V - 3.0 3.9 nC Gate to Source Gate Charg e - 1 2 - nC Gate Charge Threshold to Plateau - 9.1 - nC

V

DD

I

= 60A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 7.9 - nC

- 2900 - pF

24 31 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 15 - ns Rise Time - 169 - ns Turn-Off D elay Time - 24 - ns Fall Time - 50 - ns Turn-Off Time - - 109 ns

(VGS = 5V)

V

= 30V, ID = 60A

DD

V

= 5V, RGS = 5.1Ω

GS

--276ns

Drain-Source Diode Characteristics

I

= 60A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 40µH, IAS = 48A. 2: Pulse width = 100s.

Source to Drain Diode Voltage Reverse Recovery Time ISD = 60A, dISD/dt = 100A/µs- -33ns

Reverse Recovered Charge ISD = 60A, dISD/dt = 100A/µs- -29nC

SD

= 30A - - 1.0 V

I

SD

FDB14AN06LA0 / FDP14AN06LA0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

80

60

VGS = 5V

40

, DRAIN CURRENT (A)

D

20

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

VGS = 10V

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-1

10

θJC

10

x R

0

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

100

VGS = 5V

50

-5

10

-4

10

-3

10

-2

10

-1

10

, PEAK CURRENT (A)

DM

I

t, PUL SE WIDTH (s)

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unless otherwise noted

C

FDB14AN06LA0 / FDP14AN06LA0

1000

10µs

100

10

OPERATION IN THIS

AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

SINGLE PULSE TJ = MAX R ATED

TC = 25oC

0.1 110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

500

100

10

, AVALANCHE CURRENT (A)

AS

I

1

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

150

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

125

V

= 15V

DD

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0

TJ = 25oC

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

150

125

100

, DRAIN CURRENT (A)

D

I

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV

STARTING TJ = 150oC

0.001 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

ST ARTING TJ = 25oC

Capability

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

TC = 25oC

VGS = 10V

75

50

25

0

0 0.5 1.0 1.5 2.0 2.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 5V

VGS = 4V

VGS = 3V

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

13

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

12

VGS = 5V

11

10

DRAIN TO SOURCE ON RESISTANCE(mΩ)

9

0 20406080

VGS = 10V

ID, DRAIN CURRENT (A)

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V, ID = 60A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature