Fairchild FDP12N60NZ, FDPF12N60NZ service manual

September 2010

TO-220
FDP Series

G D S

TO-220F
FDPF Series
(potted)

G

S

D

UniFET-II

FDP12N60NZ / FDPF12N60NZ

N-Channel MOSFET

600V, 12A, 0.65

FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET

TM

Features

•R

• Low gate charge ( Typ. 26nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• ESD Improved capability

• RoHS compliant

MOSFET Maximum Ratings T

Symbol Parameter FDP12N60NZ

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.53 ( Typ.)@ VGS = 10V, ID = 6A

DS(on)

( Typ. 12pF)

rss

Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V

Drain Current
Drain Current - Pulsed (Note 1) 48 48* A

Single Pulsed Avalanche Energy (Note 2) 565 mJ
Avalanche Current (Note 1) 12 A
Repetitive Avalanche Energy (Note 1) 24 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 240 39 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi­cient switched mode power supplies and active power factor cor­rection.

FDPF12N60NZ

= 25oC) 12 12*

C

= 100oC) 7.2 7.2*

C

o

C2.00.3W/

300

Units

o

o

Thermal Characteristics

Symbol Parameter FDP12N60NZ FDPF12N60NZ Units

R

JC
CS

R

JA

Thermal Resistance, Junction to Case 0.52 3.2
Thermal Resistance, Case to Sink Typ. 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

o

C/WR

A

o

C

C
C

©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. A

www.fairchildsemi.com1

FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP12N60NZ FDP12N60NZ TO-220 - - 50

FDPF12N60NZ FDPF12N60NZ TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

BV

DSS

T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250A, Referenced to 25oC-0.6-V/

D

V

= 600V, V

DS

= 480V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±10 A

DS

Gate Threshold Voltage VGS = VDS, ID = 250A3-5V
Static Drain to Source On Resistance VGS = 10V, ID = 6A - 0.53 0.65 
Forward Transconductance VDS = 20V, ID = 6A (Note 4) - 13.5 - S

Input Capacitance
Output Capacitance - 150 200 pF
Reverse Transfer Capacitance - 12 18 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 480V, ID = 12A

Gate to Source Gate Charge - 6 - nC
Gate to Drain “Miller” Charge - 10 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 1260 1676 pF

-2634nC

A

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 50 110 ns
Turn-Off Delay Time - 80 170 ns
Turn-Off Fall Time - 60 130 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =7.85mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 12A, di/dt 200A/s, VDD BV
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 12 A
Maximum Pulsed Drain to Source Diode Forward Current - - 48 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 2.2 - C

, Starting TJ = 25°C

DSS

= 300V, ID = 12A

V

DD

R

= 25

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/s (Note 4)

F

= 12A - - 1.4 V

SD

= 12A

SD

-2560ns

- 350 - ns

FDP12N60NZ / FDPF12N60NZ Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

0.1 1 10 20

0.1

1

10

30

*Notes:

1. 250

s Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

345678

0.1

1

10

100

-55oC

150oC

* Notes :

1. V

DS

= 20V

2. 250

s Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0 5 10 15 20 25 30

0.5

0.6

0.7

0.8

0.9

1.0

* Note : TJ = 25oC

VGS = 20V

VGS = 10V

R

DS(on)

[],

Drain-Source On-Resistance

ID, Drain Current [A]

0.4 0.6 0.8 1.0 1.2 1.4

1

10

100

Notes:

1. VGS = 0V

2. 250

s Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V ]

25oC

0.1 1 10

10

100

1000

5000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

30

0 6 12 18 24 30

0

2

4

6

8

10

* Note : ID = 12A

VDS = 120V
V

DS

= 300V

V

DS

= 480V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [n C]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP12N60NZ / FDPF12N60NZ Rev. A

3

www.fairchildsemi.com