Fairchild FDP12N50U, FDPF12N50UT service manual
tm
May 2012
D
G
S
TO-220F
FDPF Series
G
S
D
TO-220
FDP Series
G D S
Ultra FRFET
FDP12N50U / FDPF12N50UT
N-Channel MOSFET, FRFET
500V, 10A, 0.8Ω
FDP12N50U / FDPF12N50UT N-Channel MOSFET
TM
Features
•R
• Low gate charge ( Typ. 21nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A
DS(on)
( Typ. 11pF)
rss
Symbol Parameter FDP12N50U FDPF12N50UT Units
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 40 40* A
Single Pulsed Avalanche Energy (Note 2) 456 mJ
Avalanche Current (Note 1) 10 A
Repetitive Avalanche Energy (Note 1) 16.5 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 165 42 W
C
- Derate above 25
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
= 25oC) 10 10*
C
= 100oC) 6 6*
C
o
C 1.33 0.3 W/oC
300
o
o
Thermal Characteristics
Symbol Parameter FDP12N50U FDPF12N50UT Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.75 3.0
Thermal Resistance, Junction to Ambient 0.5 -
Thermal Resistance, Junction to Ambient 62.5 62.5
o
C/WR
A
C
C
©2012 Fairchild Semiconductor Corporation
FDP12N50U / FDPF12N50UT Rev.C1
www.fairchildsemi.com1
FDP12N50U / FDPF12N50UT N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP12N50U FDP12N50U TO-220 - - 50
FDPF12N50UT FDPF12N50UT TO-220F - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.7-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 250
V
DS
= 0V - - 25
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 5A - 0.65 0.8 Ω
Forward Transconductance VDS = 40V, ID = 5A (Note 4) -11 -S
Input Capacitance
Output Capacitance - 140 190 pF
Reverse Transfer Capacitance - 11 17 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 10A
Gate to Source Gate Charge - 6 - nC
Gate to Drain “Miller” Charge - 9 - nC
DS
V
= 10V
GS
( Note 4 , 5)
- 1050 1395 pF
-2130nC
μA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 45 100 ns
Turn-Off Delay Time - 60 130 ns
Turn-Off Fall Time - 35 80 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 9mH, I
3. I
≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 10 A
Maximum Pulsed Drain to Source Diode Forward Current - - 40 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.1 - μC
= 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 10A
V
DD
R
= 25Ω
G
(N ote 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 10A - - 1.6 V
SD
= 10A
SD
-3580ns
-65-ns
FDP12N50U / FDPF12N50UT Rev.C1
2
www.fairchildsemi.com
Typical Performance Characteristics
110
1
10
30
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
20
4.0 4.5 5.0 5.5 6.0 6.5 7.0
1
10
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
30
0 5 10 15 20 25
0.6
0.8
1.0
1.2
1.4
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10
0
500
1000
1500
2000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0 5 10 15 20 25
0
2
4
6
8
10
*Note: ID = 10A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP12N50U / FDPF12N50UT N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP12N50U / FDPF12N50UT Rev.C1
3
www.fairchildsemi.com
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