Fairchild FDP12N50NZ, FDPF12N50NZ service manual
October 2010
TO-220
FDP Series
G D S
G
S
D
G
S
D
TO-220F
FDPF Series
(potted)
G
S
D
UniFET-II
FDP12N50NZ / FDPF12N50NZ
N-Channel MOSFET
500V, 11.5A, 0.52Ω
FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET
TM
Features
•R
• Low gate charge ( Typ. 23nC )
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
Symbol Parameter FDP12N50NZ FDPF12N50NZ Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
*Dran current limited by maximum junction temperature
= 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A
DS(on)
( Typ. 14pF )
rss
Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 46 46* A
Single Pulsed Avalanche Energy (Note 2) 560 mJ
Avalanche Current (Note 1) 11.5 A
Repetitive Avalanche Energy (Note 1) 17 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
- Continuous (T
- Continuous (T
(T
= 25oC) 170 42 W
C
- Derate above 25
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 11.5 11.5*
C
= 100oC) 6.9 6.9*
C
o
C 1.37 0.33 W/oC
300
Thermal Characteristics
Symbol Parameter
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.73 3.0
Thermal Resistance, Case to Sink Typ 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5
FDP12N50NZ FDPF12N50NZ
A
o
C
o
C
Units
o
C/WR
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. A
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP12N50NZ FDP12N50NZ TO-220 - - 50
FDPF12N50NZ FDPF12N50NZ TO-220F - - 50
FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250μA, Referenced to 25oC-0.5-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±10 μA
DS
500
--V
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 5.75A - 0.46 0.52 Ω
Forward Transconductance VDS = 20V, ID = 5.75A - 12 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 155 205 pF
Reverse Transfer Capacitance - 14 20 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 5.5 - nC
Gate to Drain “Miller” Charge - 9.6 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 50 110 ns
Turn-Off Delay Time - 60 130 ns
Turn-Off Fall Time - 45 100 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 400V, ID = 11.5A
DS
V
= 10V
GS
V
= 250V, ID = 11.5A
DD
R
= 25Ω
G
- 945 1235 pF
-2330nC
-2050ns
μA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 8.5mH, I
3. I
≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Essentially Independent of Operating Temperature Typical Characteristics
FDP12N50NZ / FDPF12N50NZ Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 46 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 2.0 - μC
= 11.5A, VDD = 50V, RG = 25Ω, S t arting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs
F
= 11.5A - - 1.4 V
SD
SD
2
= 11.5A
- 315 - ns
www.fairchildsemi.com
Typical Performance Characteristics
0.1 1 10 20
0.1
1
10
30
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5V
6.0 V
5.5 V
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
345678910
0.1
1
10
50
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 6 12 18 24 30
0.4
0.5
0.6
0.7
0.8
0.9
1.0
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0 5 10 15 20 25
0
2
4
6
8
10
*Note: ID = 11.5A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te C h arge [nC]
0.1 1 10 30
0
500
1000
1500
2000
2500
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltag e [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP12N50NZ / FDPF12N50NZ Rev. A
3
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