Fairchild FDP120AN15A0, FDD120AN15A0 service manual

FDP120AN15A0 / FDD120AN15A0

N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ

FDP120AN15A0 / FDD120AN15A0

September 2002

Features

•r

•Qg(tot) = 11.2nC (Typ.), V

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

= 101mΩ (Typ.), V

DS(ON)

= 10V, ID = 4A

GS

= 10V

GS

Applications

• DC/D C C onverter s an d Of f-line UPS

• Distributed Power Ar chitectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Re ctifier

• Direct Injection / Diesel Injection Systems

• Elec tr on ic Valve Train Syst e m s

Formerly developmental type 82845

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

SOURCE

DRAIN

GATE

MOSFET Maximum Ratings

GATE

SOURCE

TO-252AA

FDD SERIES

TC = 25°C unless otherwise noted

DRAIN

(FLANGE)

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 9.7 A

C

= 25oC, VGS = 10V) with R

amb

= 52oC/W 2.8 A

θJA

14 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 122 mJ Power dissipation 65 W Derate above 25oC0.43W/ Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristi cs

R

θJC

R

θJA

R

θJA

R

θJA

Thermal Resistance Junction to Case T O -252, TO-220 2.31 Thermal Resistance Junction to Ambien t TO-252 100 Thermal Resistance Junction to Ambient TO-220 (Note 2) 62 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad ar ea 52

Reliability data can be fou nd a t: http://ww w.f airc hilds e m i.co m /pr oduc ts/dis c rete/reliab ility/ind ex.html.

o

C/W

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD12 0AN 1 5A0 FDD12 0AN15A0 TO-252AA 330mm 16mm 2500 un its FDP120AN15A0 FDP120AN15A0 TO- 220AB Tube N/A 50 unit s

FDP120AN15A0 / FDD120AN15A0

Electrical Characteristics

TC = 25°C unless otherwise not ed

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 150 - - V

V

= 120V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

ID = 4A, VGS = 10V - 0.101 0.120 I

= 2A, VGS = 6V - 0.113 0.170

Drain to S ou r c e On Re si st ance

D

= 4A, VGS = 10V,

I

D

T

= 175oC

J

- 0.235 0.282

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 85 - pF Reverse Transfer Capacitance - 17 - pF

V

= 25V, VGS = 0V,

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 1.4 1.8 nC Gate to Source Gate Charg e - 3.5 - nC Gate Charge Threshold to Plateau - 2.1 - nC

VDD = 75V ID = 4A I

= 1.0m A

g

Gate to Drain “Miller” Charge - 2.6 - nC

-770- pF

11.2 14.5 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 6 - ns Rise Time - 16 - ns Turn-Off Delay Ti me - 30 - ns Fall Time - 19 - ns Turn-Off T ime - - 74 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 27mH, IAS = 3A. 2: Pulse width = 100s.

Source to Drain Diode Voltage Reverse Recovery Time ISD = 4A, dISD/dt = 100A/µs--61ns

Reverse Recovered Charge ISD = 4A, dISD/dt = 100A/µs - - 109 nC

- - 33 ns

VDD = 75V, ID = 4A VGS = 10V, RGS = 24Ω

I

= 4A - - 1.25 V

SD

= 2A - - 1.0 V

I

SD

FDP120AN15A0 / FDD120AN15A0

Typical Characteristics

TC = 25°C unless otherwise not ed

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-1

10

θJC

10

x R

0

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

200

TRANSCONDUCTANCE

100

MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

, PEAK CURRENT (A)

DM

I

10

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

Typical Characteristics

FDP120AN15A0 / FDD120AN15A0

TC = 25°C unless otherwise not ed

100

10

OPERATION IN THIS

1

, DRAIN CURRENT (A)

D

I

0.1

AREA MAY BE

LIMITED BY r

SINGLE PULSE TJ = MAX R ATED

TC = 25oC

1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

10ms

10µs

100µs

1ms

DC

Figure 5. Forward Bias Safe Operating Area

30

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

25

V

= 15V

DD

20

15

50

If R = 0

200

tAV = (L)(IAS)/(1.3*RATED BV If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV

10

, AVALANCHE CURRENT (A)

AS

I

1

STARTING TJ = 150oC

0.01 0.1 1 tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

30

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

25

TC = 25oC

20

15

VGS = 10V

VGS = 7V

VGS = 6V

10

, DRAIN CURRENT (A)

D

I

5

0

TJ = 25oC

TJ = 175oC

34567

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

140

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

130

120

110

100

DRAIN TO SOURCE ON RESISTANCE(mΩ)

90

03691215

VGS = 6V

VGS = 10V

ID, DRAIN CURRENT (A)

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

10

, DRAIN CURRENT (A)

D

I

5

0

012345

2.5

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

VGS = 10V, ID = 4A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature