Fairchild FDP10N50F, FDPF10N50FT service manual

FDP10N50F / FDPF10N50FT N-Channel MOSFET

D

G

S

TO-220F
FDPF Series

G

S

D

TO-220
FDP Series

G D S

FDP10N50F / FDPF10N50FT

N-Channel MOSFET

500V, 9A, 0.85Ω

Features

•R

• Low Gate Charge ( Typ. 18nC)

• Low C

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• RoHS Compliant

= 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A

DS(on)

( Typ. 10pF)

rss

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switching mode power supplies and active power factor
correction.

January 2009

TM

UniFET

MOSFET Maximum Ratings T

Symbol Parameter FDP10N50F FDPF10N50FT Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 36 36* A

Single Pulsed Avalanche Energy (Note 2) 364 mJ

Avalanche Current (Note 1) 9 A

Repetitive Avalanche Energy (Note 1) 12.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 125 42 W

C

- Derate above 25

= 25oC) 9 9*

C

= 100oC) 5.4 5.4*

C

o

C1.00.33W/

300

o

o

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.0 3.0

Thermal Resistance, Junction to Ambient 62.5 62.5

FDP10N50F FDPF10N50FT

Units

o

C/W

A

o

C

C

C

©2009 Fairchild Semiconductor Corporation
FDP10N50F / FDPF10N50FT Rev. A

www.fairchildsemi.com1

FDP10N50F / FDPF10N50FT N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP10N50F FDP10N50F TO-220 - - 50

FDPF10N50FT FDPF10N50FT TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.71 0.85 Ω

Forward Transconductance VDS = 20V, ID = 4.5A (Note 4) -8.5-S

Input Capacitance

Output Capacitance - 120 160 pF

Reverse Transfer Capacitance - 10 15 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V, ID = 10A

Gate to Source Gate Charge - 5 - nC

Gate to Drain “Miller” Charge - 7.5 - nC

DS

V

= 10V

GS

( Note 4 , 5)

- 880 1170 pF

-1824nC

μA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 40 90 ns

Turn-Off Delay Time - 45 100 ns

Turn-Off Fall Time - 30 70 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 9mH, I

≤ 8A, di/dt ≤ 200A/μs, VDD ≤ BV

3: I

SD

4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 9 A

Maximum Pulsed Drain to Source Diode Forward Current - - 60 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.2 - μC

= 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 250V, ID = 10A

V

DD

R

= 25Ω

G

(N ote 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 9A - - 1.5 V

SD

= 9A

SD

-2050ns

-95-ns

FDP10N50F / FDPF10N50FT Rev. A

2

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Typical Performance Characteristics

0.1 1 10

0.1

1

10

20

*Notes:

1. 250

μ

s Pulse Test

2. T

C

= 25oC

V

GS

=

15.0 V

12.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

246810

0.1

1

10

30

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μ

s Pulse Test

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

0 4 8 121620

0.6

0.8

1.0

1.2

1.4

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[

Ω

]

,

Drain-Source On-Resistance

ID, Drain Current [A]

0.0 0.4 0.8 1.2 1.6

0.1

1

10

30

*Notes:

1. VGS = 0V

2. 250

μ

s Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1

110

30

0

500

1000

1500

2000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted

)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 4 8 12 16 20

0

2

4

6

8

10

*Note: ID = 10A

VDS = 100V
V

DS

= 250V

V

DS

= 400V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP10N50F / FDPF10N50FT N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP10N50F / FDPF10N50FT Rev. A

3

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