Fairchild FDP100N10 service manual

FDP100N10

D

G

S

TO-220
FDP Series

G D S

N-Channel PowerTrench® MOSFET

100V, 75A, 10mΩ

FDP100N10 N-Channel PowerTrench

March 2012

Features

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handing capability

• RoHS compliant

Applications

• DC to DC converters / Synchronous Rectification

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns

P

D

, T

T

J

T

L

= 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

DS(on)

= 25oC unless otherwise noted

C

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current - Continuous (TC = 75oC) 75 A

D r a i n C u r r e n t - P u l s e d (Note 1) 300 A

Single Pulsed Avalanche Energy (Note 2) 365 mJ

(T

= 25oC) 208 W

C

- Derate above 25

STG

Power Dissipation

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

This N-Channel MOSFET is producedusing Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

o

C1.4W/

300

o

o

®

MOSFET

o

C

C

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θCS

R

θJA

©2012 Fairchild Semiconductor Corporation
FDP100N10 Rev. C1

Thermal Resistance, Junction to Case 0.72

Thermal Resistance, Case to Sink Typ. 0.5

Thermal Resistance, Junction to Ambient 62.5

o

C/WR

www.fairchildsemi.com1

FDP100N10 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP100N10 FDP100N10 TO-220AB Tube N/A 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

/ ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 100 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC-0.1-V/

D

V

= 100V, V

DS

= 100V, V

V

DS

= 0V - - 1

GS

= 0V, TJ = 150oC - - 500

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.5-4.5V

Static Drain to Source On Resistance VGS = 10V, ID = 75A - 8.2 10 mΩ

Forward Transconductance VDS = 10V, ID = 37.5A (Note 4) -110 -S

Input Capacitance

Output Capacitance - 530 710 pF

Reverse Transfer Capacitance - 220 325 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 50V, ID = 75A

Gate to Source Gate Charge - 30 - nC

Gate to Drain “Miller” Charge - 20 - nC

DS

V

= 10V

GS

( Note 4 , 5)

- 5500 7300 pF

- 76 100 nC

μA

o

C

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 265 540 ns

Turn-Off Delay Time - 125 260 ns

Turn-Off Fall Time - 115 240 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.13mH, I
3: I

≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 75 A

Maximum Pulsed Drain to Source Diode Forward Current - - 300 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 164 - nC

= 75A, VDD = 25V, RG = 25Ω, Starting TJ = 25oC

AS

, Starting TJ = 25oC

DSS

= 50V, ID = 75A

V

DD

V

= 10V, R

GS

(N ote 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 25Ω

GEN

= 75A - - 1.25 V

SD

= 75A

SD

- 70 150 ns

-71-ns

FDP100N10 Rev. C1

2

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Typical Performance Characteristics

24681012

1

10

100

1000

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

0.1 1

10

100

5

500

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

10

100

1000

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 50 100 150 200 250 300 350

0.000

0.005

0.010

0.015

0.020

*Note: TJ = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10

0

2000

4000

6000

8000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

30

0 153045607590

0

2

4

6

8

10

*Note: ID = 75A

VDS = 80V
V

DS

= 50V

V

DS

= 25V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP100N10 N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP100N10 Rev. C1

3

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