Fairchild FDP090N10 service manual
tm
FDP090N10
N-Channel PowerTrench® MOSFET
100V, 75A, 9mΩ
FDP090N10 N-Channel PowerTrench
January 2008
Features
•R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
= 7.2mΩ ( Typ.) @ VGS = 10V, ID = 75A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
G
S
G
D
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.6 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (TC = 85oC) 75 A
Drain Current - Pulsed (Note 1) 300 A
Single Pulsed Avalanche Energy (Note 2) 309 mJ
Avalance Current (Note 1) 75 A
Repetitive Avalanche Energy (Note 1) 20.8 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
C
S
o
= 25
C unless otherwise noted*
(T
= 25oC) 208 W
C
- Derate above 25
o
C1.39W/
300
o
o
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.72
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5
o
C/WR
®
MOSFET
o
C
C
C
©2008 Fairchild Semiconductor Corporation
FDP090N10 Rev. A
www.fairchildsemi.com1
FDP090N10 N-Channel PowerTrench
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP090N10 FDP090N10 TO-220 - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 100 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250µA, Referenced to 25oC-0.1-V/
D
V
= 100V, V
DS
= 100V, V
V
DS
= 0V - - 1
GS
= 0V, TC = 150oC - - 500
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 7.2 9 mΩ
Forward Transconductance VDS = 10V, ID = 37.5A (Note 4) - 100 - S
Input Capacitance
Output Capacitance - 585 775 pF
Reverse Transfer Capacitance - 235 355 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
- 6185 8225 pF
µA
o
C
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(tot)
gs
gd
Turn-On Delay Time
Turn-On Rise Time - 322 655 ns
Turn-Off Delay Time - 166 342 ns
Turn-Off Fall Time - 149 309 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 37 - nC
Gate to Drain “Miller” Charge - 22 - nC
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 75 A
Maximum Pulsed Drain to Source Diode Forward Current - - 300 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 166 - nC
, Starting TJ = 25°C
DSS
= 50V, ID = 75A
V
DD
V
= 10V, R
GS
(Note 4, 5)
V
= 50V, ID = 75A
DS
V
= 10V
GS
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs (Note 4)
F
= 25Ω
GEN
= 75A - - 1.25 V
SD
= 75A
SD
- 107 224 ns
- 89 116 nC
-73-ns
FDP090N10 Rev. A
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
V
= 15.0 V
GS
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
,Drain Current[A]
D
I
*Notes:
1. 250
µs Pulse Test
= 25oC
10
7
0.2
2. T
C
1
5
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.020
500
100
,Drain Current[A]
D
I
10
2
150oC
-55oC
25oC
*Notes:
1. V
2. 250
= 20V
DS
µs Pulse Test
45678
VGS,Gate-Source Voltage[V]
500
FDP090N10 N-Channel PowerTrench
®
MOSFET
0.015
100
[Ω],
0.010
DS(ON)
R
0.005
Drain-Source On-Resistance
0.000
0 100 200 300 400
VGS = 10V
VGS = 20V
*Note: TC = 25oC
ID, Drain Current [A]
10
, Reverse Drain Current [A]
S
I
3
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V ]
150oC
25oC
*Notes:
1. VGS = 0V
2. 250
µs Pulse Test
Figure 5. Capacitance Characteristics F igure 6. Gate Charge Characteristics
9000
7500
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
iss
C
= C
rss
6000
4500
C
oss
3000
Capacitances [pF]
1500
0
0.1 1 10
C
rss
VDS, Drain-Source Voltage [V ]
gd
gd
*Note:
1. V
= 0V
GS
2. f = 1MH z
30
10
VDS = 25V
= 50V
V
8
DS
= 80V
V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 20406080100
*Note: ID = 75A
Qg, Total Ga te C harge [nC]
FDP090N10 Rev. A
3
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