Fairchild FDP085N10A service manual

FDP085N10A_F102

G

S

D

TO-220

G

S

D

N-Channel PowerTrench® MOSFET

100V, 96A, 8.5mΩ

FDP085N10A_F102 N-Channel PowerTrench

May 2011

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

•RoHS Compliant

= 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A

DS(on)

R

DS(on)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P

D

, T

T

J

STG

T

L

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 384 A

Single Pulsed Avalanche Energy (Note 2) 269 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted

C

-Continuous (T

-Continuous (T

(T

= 25oC) 188 W

C

- Derate above 25

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

= 25oC) 96

C

= 100oC) 68

C

o

C1.25W/

300

o

o

®

MOSFET

A

o

C

C
C

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. A

Thermal Resistance, Junction to Case 0.8
Thermal Resistance, Junction to Ambient 62.5

Ratings

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Units

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP085N10A FDP085N10A_F102 TO-220 - - 50

FDP085N10A_F102 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V,TC = 25oC 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.07 - V/oC

D

V

= 80V, V

DS

= 80V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 96A - 7.35 8.5 mΩ

= 10V , ID = 96A (Note 4)

Forward Transconductance

V

DS

-72-S

Dynamic Characteristics

C

iss

C

oss

C

rss

(er) Engry Releted Output Capacitance VDS = 50V, VGS = 0V - 752 - pF

C

oss

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Input Capacitance
Output Capacitance - 468 620 pF
Reverse Transfer Capacitance - 20 - pF

= 50V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V
Gate to Source Gate Charge - 9.7 - nC
Gate Charge Threshoid to Plateau - 5.0 - nC
Gate to Drain “Miller” Charge - 7.5 - nC

= 10V, V

V

GS

I

= 96A

D

(Note 4, 5)

DS

= 50V

ESR Equivalent Series Resistance (G-S) Drain Open, f = 1MHz - 0.97 - Ω

- 2025 2695 pF

-3140nC

μA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 29 68 ns
Turn-Off Fall Time - 8 26 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 3 mH, IAS = 13.4 A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 96 A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 96 A
Maximum Pulsed Drain to Source Diode Forward Current - - 384 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 80 - nC

, Starting TJ = 25°C

DSS

= 50V, ID = 96A

V

DD

V

= 10V, R

GS

(Note 4, 5)

= 0V, I

GS

V

= 50V,VGS = 0V, I

DD

dI

/dt = 100A/μs (Note 4)

F

= 4.7Ω

GEN

= 96A - - 1.3 V

SD

= 96A

SD

-1846ns

-59-ns

FDP085N10A_F102 Rev. A

2

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Typical Performance Characteristics

0.1 1 5

5

10

100

500

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

8.0V

6.5V

6.0V

5.5V

5.0V

234567

1

10

100

300

-55oC

175oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0 100 200 300 400

4

8

12

16

18

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.3 0.6 0.9 1.2 1.5

1

10

100

500

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 100

10

100

1000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 7 14 21 28 35

0

2

4

6

8

10

*Note: ID = 96A

VDS = 20V
V

DS

= 50V

V

DS

= 80V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP085N10A_F102 N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP085N10A_F102 Rev. A

3

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