Fairchild FDP083N15A service manual
D
G
S
TO-220
G
D
S
FDP083N15A_F102
N-Channel PowerTrench® MOSFET
150V, 105A, 8.3mΩ
FDP083N15A_F102 N-Channel PowerTrench
April 2011
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
TJ, T
T
L
*Package limitation current is 120A.
= 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A
DS(on)
R
DS(on)
= 25oC unless otherwise noted
C
Symbol Parameter Ratings Units
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
- Continuous (TC = 25oC, Silicon Limited) 105
- Continuous (TC = 100oC, Silicon Limited) 75
(TC = 25oC) 231 W
- Derate above 25oC 1.54 W/oC
STG
Drain Current
Drain Current - Pulsed (Note 1) 420 A
Single Pulsed Avalanche Energy (Note 2) 542 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
This N-Channel MOSFET is produced using Fairchild Semi-
conductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Server/Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
300
®
MOSFET
A
o
C
o
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
©2011 Fairchild Semiconductor Corporation
FDP083N15A_F102 Rev. A2
Thermal Resistance, Junction to Case 0.65
Thermal Resistance, Junction to Ambient 62.5
o
C/W
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Description Quantity
FDP083N15A FDP083N15A_F102 TO-220 F102: Trimmed Leads 50
FDP083N15A_F102 N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 150 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250µA, Referenced to 25oC - 0.08 - V/oC
VDS = 120V, V
= 0V - - 1
GS
VDS = 120V, TC = 150oC - - 500
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, I
= 75A - 6.85 8.30 mΩ
D
Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 139 - S
Dynamic Characteristics
C
C
C
Q
Q
Q
Q
iss
oss
rss
g(tot)
gs
gs2
gd
Input Capacitance
Output Capacitance - 1445 1880 pF
Reverse Transfer Capacitance - 100 - pF
VDS = 25V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 19.1 - nC
Gate Charge Threshold to Plateau - 8.7 - nC
VDS = 75V, ID = 75A
VGS = 10V
Gate to Drain “Miller” Charge - 13.5 - nC
ESR Equivalent Series Resistance(G-S) Drain Open, f=1MHz - 2.5 - Ω
- 4645 6040 pF
- 64.5 84 nC
µA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 58 126 ns
Turn-Off Delay Time - 61 132 ns
Turn-Off Fall Time - 26 62 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A
3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 105 A
Maximum Pulsed Drain to Source Diode Forward Current - - 420 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 268 - nC
, Starting TJ = 25°C
DSS
VDD = 75V, ID = 75A
VGS = 10V, R
= 0V, I
GS
VGS = 0V, I
= 4.7Ω
GEN
= 75A - - 1.25 V
SD
= 75A, VDD = 120V
SD
dIF/dt = 100A/µs
- 22 54 ns
- 96 - ns
FDP083N15A_F102 Rev. A2
2
www.fairchildsemi.com
Typical Performance Characteristics
2 3 4 5 6
1
10
100
300
-55oC
175oC
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 10
10
100
500
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
0.0 0.5 1.0 1.5
1
10
100
500
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
175oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 100 200 300 400
4
6
8
10
12
14
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 30
50
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 25 50 75
0
2
4
6
8
10
*Note: ID = 75A
VDS = 30V
VDS = 75V
VDS = 120V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP083N15A_F102 N-Channel PowerTrench
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP083N15A_F102 Rev. A2
3
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