Fairchild FDP083N15A service manual

D

G

S

TO-220

G

D

S

FDP083N15A_F102

N-Channel PowerTrench® MOSFET

150V, 105A, 8.3mΩ

FDP083N15A_F102 N-Channel PowerTrench

April 2011

Features

• R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

P

D

TJ, T

T

L

*Package limitation current is 120A.

= 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

R

DS(on)

= 25oC unless otherwise noted

C

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

- Continuous (TC = 25oC, Silicon Limited) 105

- Continuous (TC = 100oC, Silicon Limited) 75

(TC = 25oC) 231 W

- Derate above 25oC 1.54 W/oC

STG

Drain Current

Drain Current - Pulsed (Note 1) 420 A

Single Pulsed Avalanche Energy (Note 2) 542 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

This N-Channel MOSFET is produced using Fairchild Semi-

conductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Server/Telecom PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

300

®

MOSFET

A

o

C

o

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2011 Fairchild Semiconductor Corporation
FDP083N15A_F102 Rev. A2

Thermal Resistance, Junction to Case 0.65

Thermal Resistance, Junction to Ambient 62.5

o

C/W

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Description Quantity

FDP083N15A FDP083N15A_F102 TO-220 F102: Trimmed Leads 50

FDP083N15A_F102 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 150 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

ID = 250µA, Referenced to 25oC - 0.08 - V/oC

VDS = 120V, V

= 0V - - 1

GS

VDS = 120V, TC = 150oC - - 500

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, I

= 75A - 6.85 8.30 mΩ

D

Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 139 - S

Dynamic Characteristics

C

C

C

Q

Q

Q

Q

iss

oss

rss

g(tot)

gs

gs2

gd

Input Capacitance

Output Capacitance - 1445 1880 pF

Reverse Transfer Capacitance - 100 - pF

VDS = 25V, VGS = 0V
f = 1MHz

Total Gate Charge at 10V

Gate to Source Gate Charge - 19.1 - nC

Gate Charge Threshold to Plateau - 8.7 - nC

VDS = 75V, ID = 75A
VGS = 10V

Gate to Drain “Miller” Charge - 13.5 - nC

ESR Equivalent Series Resistance(G-S) Drain Open, f=1MHz - 2.5 - Ω

- 4645 6040 pF

- 64.5 84 nC

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 58 126 ns

Turn-Off Delay Time - 61 132 ns

Turn-Off Fall Time - 26 62 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A

3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 105 A

Maximum Pulsed Drain to Source Diode Forward Current - - 420 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 268 - nC

, Starting TJ = 25°C

DSS

VDD = 75V, ID = 75A
VGS = 10V, R

= 0V, I

GS

VGS = 0V, I

= 4.7Ω

GEN

= 75A - - 1.25 V

SD

= 75A, VDD = 120V

SD

dIF/dt = 100A/µs

- 22 54 ns

- 96 - ns

FDP083N15A_F102 Rev. A2

2

www.fairchildsemi.com

Typical Performance Characteristics

2 3 4 5 6

1

10

100

300

-55oC

175oC

*Notes:

1. VDS = 10V

2. 250µs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 10

10

100

500

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 10.0V

8.0V

6.5V

6.0V

5.5V

5.0V

0.0 0.5 1.0 1.5

1

10

100

500

*Notes:

1. VGS = 0V

2. 250µs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 100 200 300 400

4

6

8

10

12

14

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10 30

50

100

1000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. VGS = 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 25 50 75

0

2

4

6

8

10

*Note: ID = 75A

VDS = 30V
VDS = 75V
VDS = 120V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP083N15A_F102 N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP083N15A_F102 Rev. A2

3

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.90

0.95

1.00

1.05

1.10

*Notes:

1. VGS = 0V

2. ID = 250µA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 75A

R

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

0.1 1 10 100 300

0.1

1

10

100

1000

10µs

100µs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

DC

25 50 75 100 125 150 175

0

20

40

60

80

100

120

I

D

, Drain Current [A]

TC, Case Temperature [oC]

0.001 0.01 0.1 1 10 100 1000

1

10

50

STARTING TJ = 150oC

STARTING TJ = 25oC

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

FDP083N15A_F102 N-Channel PowerTrench

®

MOSFET

Figure 11. Unclamped Inductive Switching
Capability

FDP083N15A_F102 Rev. A2

4

www.fairchildsemi.com

Typical Performance Characteristics

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.001

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 0.65oC/W Max.

2. Duty Factor, D= t1/t

2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

Figure 12. Transient Thermal Response Curve

FDP083N15A_F102 N-Channel PowerTrench

P

DM

t

1

t

2

MOSFET

®

FDP083N15A_F102 Rev. A2

www.fairchildsemi.com5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP083N15A_F102 N-Channel PowerTrench

®

MOSFET

FDP083N15A_F102 Rev. A2

6

www.fairchildsemi.com

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDP083N15A_F102 N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

®

MOSFET

FDP083N15A_F102 Rev. A2

7

www.fairchildsemi.com

Mechanical Dimensions

FDP083N15A_F102 N-Channel PowerTrench

TO-220

(F102: Trimmed Leads)

MOSFET

®

FDP083N15A_F102 Rev. A2

Dimensions in Millimeters

8

www.fairchildsemi.com

TRADEMARKS

®

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower™
Auto-SPM™
AX-CAP™*
Build it Now™
CorePLUS™
CorePOWER™

CROSSVOLT™

CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK

®

®

EfficentMax™
ESBC™

®

Fairchild
Fairchild Semiconductor
FACT Quiet Series™

®

FACT

®

FAST
FastvCore™
FETBench™
FlashWriter® *
FPS™

®

F-PFS™

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR

®

®

®

PDP SPM™

Power-SPM™
PowerTrench

SM

PowerXS™
Programmable Active Droop™
QFET
QS™

®

®

Quiet Series™
RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™

®

SPM
STEALTH™
SuperFET
SuperSOT™-3

®

SuperSOT™-6
SuperSOT™-8
SupreMOS

®

SyncFET™
Sync-Lock™
®*

The Power Franchise
The Right Technology for Your Success™

®

TinyBoost™
TinyBuck™
TinyCalc™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT®*

µSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

®

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FDP083N15A_F102 N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDP083N15A_F102 Rev. A2

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

9

www.fairchildsemi.com

Rev. I53