Fairchild FDP075N15A, FDB075N15A service manual
July 2011
G
S
D
TO-220
G
D
S
D2-PAK
FDB Series
G
S
D
FDP075N15A_F102 / FDB075N15A
FDP075N15A_F102/FDB075N15A N-Channel PowerTrench
N-Channel PowerTrench® MOSFET
150V, 130A, 7.5mΩ
Features
• R
• Fast Switching
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
= 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A
DS(on)
R
DS(on)
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Telecommunication PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
MOSFET Maximum Ratings T
Symbol Parameter
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
TJ, T
STG
T
L
*Package limitation current is 120A.
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 522 A
Single Pulsed Avalanche Energy (Note 2) 588 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
FDP075N15A_F102
FDB075N15A
-Continuous (TC = 25oC) 130
-Continuous (TC = 100oC) 92
(TC = 25oC) 333 W
- Derate above 25oC 2.22 W/oC
300
Units
o
o
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
Thermal Resistance, Junction to Case 0.45
Thermal Resistance, Junction to Ambient 62.5
FDP075N15A_F102
FDB075N15A
Units
o
C/W
®
MOSFET
A
C
C
©2011 Fairchild Semiconductor Corporation
FDP075N15A_F102 / FDB075N15A Rev. C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Description Quantity
FDP075N15A FDP075N15A_F102 TO-220 F102: Trimmed Leads 50
Device Marking Device Package Reel Size Tape Width Quantity
FDB075N15A FDB075N15A D2-PAK 330mm 24mm 800
FDP075N15A_F102/FDB075N15A N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250µA, Referenced to 25oC - 0.1 - V/oC
VDS = 120V, V
= 0V - - 1
GS
VDS = 120V, TC = 150oC - - 500
= 0V - - ±100 µA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, I
Forward Transconductance
VDS = 10V, ID = 100A (Note 4)
= 100A - 6.25 7.5 mΩ
D
- 164 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss(er)
Q
g(tot)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 516 685 pF
Reverse Transfer Capacitance - 21 - pF
VDS = 75V, VGS = 0V
f = 1MHz
Energy Related Output Capacitance VDS = 75V, VGS = 0V - 909 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 26 - nC
Gate Charge Threshold to Plateau - 11 - nC
VDS = 75V, ID = 100A
VGS = 10V
Gate to Drain “Miller” Charge - 16 - nC
ESR Equivalent Series Resistance(G-S) Drain Open, f = 1MHz - 2.29 - Ω
- 5525 7350 pF
- 77 100 nC
µA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 37 84 ns
Turn-Off Delay Time - 62 134 ns
Turn-Off Fall Time - 21 52 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C, L = 3 mH, IAS = 19.8 A
3. ISD ≤ 100 A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP075N15A_F102 / FDB075N15A Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 130 A
Maximum Pulsed Drain to Source Diode Forward Current - - 520 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 264 - nC
, Starting TJ = 25°C
DSS
VDD = 75V, ID = 100A
VGS = 10V, R
= 0V, I
GS
VGS = 0V, VDD = 75V, I
= 4.7Ω
GEN
= 100A - - 1.25 V
SD
= 100A
SD
dIF/dt = 100A/µs
2
- 28 66 ns
- 97 - ns
www.fairchildsemi.com
Typical Performance Characteristics
2 3 4 5 6
1
10
100
400
-55oC
175oC
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 3
7
10
100
400
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
0.0 0.5 1.0 1.5
1
10
100
400
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
175oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 100 200 300 400
4
6
8
10
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 100 200
10
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 30 60 90
0
2
4
6
8
10
*Note: ID = 100A
VDS = 30V
VDS = 75V
VDS = 120V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP075N15A_F102/FDB075N15A N-Channel PowerTrench
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP075N15A_F102 / FDB075N15A Rev. C0
®
MOSFET
3
www.fairchildsemi.com
Loading...