Fairchild FDB050AN06A0, FDP050AN06A0 service manual

FDB050AN06A0 / FDP050AN06A0

N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ

FDB050AN06A0 / FDP050AN06A0

February 2003

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82575

DRAIN

(FLANGE)

MOSFET Maximum Ratings T

= 4.3mΩ (Typ.), V

DS(ON)

(tot) = 61nC (Typ.), V

g

Body Diode

RR

GS

= 10V

GS

TO-2 20AB

FDP SERIES

= 10V, ID = 80A

SOURCE

DRAIN

GATE

= 25°C unless otherwise noted

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 12V and 24V systems

GATE

SOURCE

TO-2 63AB

FDB SERIES

DRAIN

(FLANGE)

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current

I

D

Continuous (T

< 135oC, VGS = 10V)

C

= 25oC, VGS = 10V, R

A

= 43oC/W) 18 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Ener gy (Note 1) 470 mJ

Power dissipation 245 W

o

Derate above 25

C1.63W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-220,TO-263 0.61

Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) 62

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB050AN06A0 / FDP050AN06A0 Rev. A

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB050AN06A0 FDB050AN06A0 TO-263AB 330mm 24mm 800 units

FDP050AN06A0 FDP050AN06A0 TO-220AB Tube N/A 50 units

FDB050AN06A0 / FDP050AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 80A, VGS = 10V - 0.0043 0.005

I

D

I

= 40A, VGS = 6V - 0.007 0.011

Drain to Source On Resistance

D

= 80A, VGS = 10V,

I

D

T

= 175oC

J

- 0.0085 0.010

Dynamic Characteristics

C

Q

ISS

OSS

RSS

g(TOT)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 750 - pF

Reverse Transfer Capacitance - 270 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V

Threshold Gate Charge VGS = 0V to 2V - 8 11 nC

Gate to Source Gate Charge - 24 - nC

Gate Charge Threshold to Plateau - 16 - nC

V

DD

I

= 80A

D

I

= 1.0mA

g

= 30V

Gate to Drain “Miller” Charge - 15 - nC

- 3900 - pF

61 80 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 16 - ns

Rise Time - 160 - ns

Turn-Off Delay Time - 28 - ns

Fall Tim e - 29 - ns

Turn-Off Time - - 86 ns

(VGS = 10V)

V

= 30V, ID = 80A

DD

V

= 10V, RGS = 4.3Ω

GS

--264ns

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 229µH, IAS = 64A. 2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- - 34ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- - 25nC

SD

= 40A - - 1.0 V

I

SD

FDB050AN06A0 / FDP050AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

160

120

80

, DRAIN CURRENT (A)

D

40

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-1

10

θJC

10

0

x R

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

VGS = 10V

TRANSCONDUCTANCE

, PEAK CURRENT (A)

DM

I

MAY LIMIT CURRENT IN THIS REGION

100

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDB050AN06A0 / FDP050AN06A0

Typical Characteristics T

1000

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

D

I

1

0.1

AREA MAY BE

LIMITED BY r

SINGLE PULSE TJ = MAX RATED

TC = 25oC

110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

120

500

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3* RATED BV

t

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

STARTING TJ = 150oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

160

VGS = 7V

120

VGS = 10V

VGS = 6V

80

TJ = 25oC

, DRAIN CURRENT (A)

D

I

40

0

4.0 4.5 5.0 5.5 6.0

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

80

, DRAIN CURRENT (A)

D

40

I

PULSE DURATION = 80µs

0

0 0.5 1.0 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5% MAX

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

8

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

7

6

5

DRAIN TO SOURCE ON RESISTANCE(mΩ)

4

0 20406080

ID, DRAIN CURRENT (A)

VGS = 6V

VGS = 10V

2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

TC = 25oC

VGS = 10V, ID =80A

Figure 9. Drain to Source On Resistance vs Drain

Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature