Fairchild FDP047N08 service manual
tm
FDP047N08
N-Channel PowerTrench® MOSFET
75V, 164A, 4.7mΩ
FDP047N08 N-Channel PowerTrench
March 2008
Features
•R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
= 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A
DS(on)
G
D
S
TO-220
FDP Series
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
DS(on)
Application
• DC to DC convertors / Synchronous Rectification
®
MOSFET
D
G
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 3.0 V/ns
P
D
, T
T
J
STG
T
L
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V
D r a i n C urrent
Drain Current - Pulsed (Note 1) 656 A
Single Pulsed Avalanche Energy (Note 2) 670 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 268 W
C
- Derate above 25
= 25oC) 164* A
C
= 100oC) 116* A
C
o
C1.79W/
300
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
θCS
R
θJA
©2008 Fairchild Semiconductor Corporation
FDP047N08 Rev. A
Thermal Resistance, Junction to Case 0.56
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5
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o
C
o
C
o
C
o
C/WR
FDP047N08 N-Channel PowerTrench
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP047N08
FDP047N08 TO-220 - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC75 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250µA, Referenced to 25oC - 0.02 - V/oC
D
V
= 75V, V
DS
= 75V, TC = 150oC - - 500
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 80A - 3.7 4.7 mΩ
Forward Transconductance VDS = 10V , ID = 80A (Note 4) - 150 - S
Input Capacitance
Output Capacitance - 870 1155 pF
Reverse Transfer Capacitance - 410 615 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
- 7080 9415 pF
µA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(tot)
gs
gd
Turn-On Delay Time
Turn-On Rise Time - 147 304 ns
Turn-Off Delay Time - 220 450 ns
Turn-Off Fall Time - 114 238 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 37 - nC
Gate to Drain “Miller” Charge - 32 - nC
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.21mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 164 A
Maximum Pulsed Drain to Source Diode Forward Current - - 656 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 66 - nC
, Starting TJ = 25°C
DSS
= 37.5V, ID = 80A
V
DD
R
= 25Ω, VGS = 10V
GEN
(Note 4, 5)
V
= 60V, ID = 80A
DS
V
= 10V
GS
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs (Note 4)
F
= 80A - - 1.25 V
SD
= 80A
SD
- 100 210 ns
- 117 152 nC
-45-ns
FDP047N08 Rev. A
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
V
= 15.0V
GS
10.0V
8.0 V
7.0 V
100
6.5 V
6.0 V
5.5 V
10
,Drain Current[A]
D
I
*Notes:
µs Pulse Test
1. 250
= 25oC
2. T
1
0.002 0.01 0.1 1
C
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.006
500
*Notes:
1. V
= 20V
DS
µs Pulse Test
2. 250
100
175oC
10
,Drain Current[A]
D
I
1
34567
25oC
-55oC
VGS,Gate-Source Voltage[V]
500
FDP047N08 N-Channel PowerTrench
®
MOSFET
0.005
VGS = 10V
[Ω],
0.004
DS(ON)
R
VGS = 20V
100
175oC
25oC
10
0.003
, Reverse Drain Current [A]
Drain-Source On-Resistance
S
I
*Note: TC = 25oC
0.002
0 100 200 300 400
ID, Drain Current [A]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
12000
C
iss
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
= C
gd
gd
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
10
VDS = 15V
= 37.5V
V
8
V
DS
DS
= 60V
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
8000
6
C
oss
4000
Capacitances [pF]
C
rss
*Note:
= 0V
1. V
GS
2. f = 1MHz
4
, Gate-Source Voltage [V]
GS
V
2
0
FDP047N08 Rev. A
0.1 1 10 30
VDS, Drain-Source Voltage [V]
0
0 20406080100120
*Note: ID = 80A
Qg, Total G a te C harge [n C]
3
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