Fairchild FDP036N10A service manual

tm

FDP036N10A

D

G

S

TO-220AB

FDP Series

DRAIN

DRAIN

GATE

(FLANGE)

SOURCE

N-Channel PowerTrench® MOSFET

100V, 214A, 3.6mΩ

FDP036N10A N-Channel PowerTrench

July 2011

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P

D

, T

T

J

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

= 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

R

DS(on)

o

= 25

C unless otherwise noted

C

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

- Continuous (T

Drain Current

- Continuous (T
Drain Current - Pulsed (Note 1) 856 A
Single Pulsed Avalanche Energy (Note 2) 658 mJ

(T

= 25oC) 333 W

C

- Derate above 25

STG

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

= 25oC, Silicon Limited) 214*

C

= 100oC, Silicon Limited) 151*

C

= 25oC, Package Limited) 120

C

o

C2.22W/

300

o

o

®

MOSFET

A- Continuous (T

o

C

C
C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2011 Fairchild Semiconductor Corporation
FDP036N10A Rev. A3

Thermal Resistance, Junction to Case 0.45
Thermal Resistance, Junction to Ambient 62.5

o

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP036N10A FDP036N10A TO-220 - - 50

FDP036N10A N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.07 - V/oC

D

V

= 80V, V

DS

= 80V, TC = 150oC--500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 3.0 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.2 3.6 mΩ
Forward Transconductance VDS = 10V , ID = 75A (Note 4) - 167 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Input Capacitance
Output Capacitance - 2430 3230 pF
Reverse Transfer Capacitance - 210 315 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V
Gate to Source Gate Charge - 24 - nC
Gate Charge Threshold to Plateau - 8 - nC

= 80V, ID = 75A

V

DS

V

= 10V

GS

Gate to Drain “Miller” Charge - 25 - nC

Turn-On Delay Time

V

= 50V, ID = 75A

Turn-On Rise Time - 54 118 ns
Turn-Off Delay Time - 37 84 ns

DD

V

GS

= 10V, R

GEN

= 4.7Ω

Turn-Off Fall Time - 11 32 ns

ESR Equivalent Series Resistance (G-S) - 1.2 - Ω

- 5485 7295 pF

- 89 116 nC

-2254ns

μA

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Starting T

3. I

≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDP036N10A Rev. A3

Maximum Continuous Drain to Source Diode Forward Current - - 214 A
Maximum Pulsed Drain to Source Diode Forward Current - - 856 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 129 - nC

= 25°C, L = 1mH, IAS = 36.3A

J

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs

F

= 75A - - 1.25 V

SD

= 75A, V

SD

2

DD

= 80V

-72-ns

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Typical Performance Characteristics

0.02 0.1 1 10

2

10

100

600

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

23456

1

10

100

300

-55oC

150oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.2 0.4 0.6 0.8 1.0 1.2

1

10

100

500

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 60 120 180 240 300 360

0.0025

0.0030

0.0035

0.0040

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0306090

0

2

4

6

8

10

*Note: ID = 75A

VDS = 20V
V

DS

= 50V

V

DS

= 80V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te C h arge [nC]

0.1

110

30

100

5000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDP036N10A N-Channel PowerTrench

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

®

MOSFET

FDP036N10A Rev. A3

3

www.fairchildsemi.com