Fairchild FDP032N08 service manual

tm

FDP032N08

N-Channel PowerTrench® MOSFET

75V, 235A, 3.2mΩ

FDP032N08 N-Channel PowerTrench

July 2008

Features

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
P

D

, T

T

J

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limit ation current is 120A.

= 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

DS(on)

G

D

S

Symbol Parameter FDP032N08 Units

Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V

Drain Current - Continuous (TC = 25oC, Silicon Limited)

- Continuous (T

- Continuous (T
Drain Current - Pulsed (Note 1) 940 A

Single Pulsed Avalanche Energy (Note 2) 1995 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220

= 25oC unless otherwise noted*

C

= 100oC, Silicon Limited)

C

= 25oC, Package Limited)

C

(T

= 25oC) 375 W

C

- Derate above 25

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s adcanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC convertors / Synchronous Rectification

D

G

S

235* A
165* A

120 A

o

C2.5W/

300

o

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5

o

C/WR

®

MOSFET

o

C

C
C

©2008 Fairchild Semiconductor Corporation
FDP032N08 Rev. A3

www.fairchildsemi.com1

FDP032N08 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP032N08

FDP032N08 TO-220 - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC75 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC - 0.05 - V/oC

D

V

= 75V, V

DS

= 75V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.5 3.2 mΩ
Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 180 - S

Input Capacitance
Output Capacitance - 1360 1810 pF
Reverse Transfer Capacitance - 595 800 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 60V, ID = 75A

Gate to Source Gate Charge - 60 - nC
Gate to Drain “Miller” Charge - 47 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 11400 15160 pF

- 169 220 nC

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 191 392 ns
Turn-Off Delay Time - 335 680 ns
Turn-Off Fall Time - 121 252 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 235 A
Maximum Pulsed Drain to Source Diode Forward Current - - 940 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 77 - nC

, Starting TJ = 25°C

DSS

= 37.5V, ID = 75A

V

DD

R

= 25Ω, VGS = 10V

GEN

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 75A - - 1.3 V

SD

= 75A

SD

- 230 470 ns

-53-ns

FDP032N08 Rev. A3

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3000

V

= 15.0 V

GS

10.0 V

1000

8.0 V

7.0 V

6.5 V

6.0 V

100

5.5 V

5.0 V

10

,Drain Current[A]

D

I

1

0.1

0.01 0.1 1

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.0030

500

100

175oC

10

,Drain Current[A]

D

I

1

2468

-55oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS,Gate-Source Voltage[V]

400

FDP032N08 N-Channel PowerTrench

®

MOSFET

100

VGS = 10V

175oC

[Ω],

DS(ON)

R

0.0025

VGS = 20V

Drain-Source On-Resistance

0.0020
0 100 200 300 400

*Note: TC = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

1

0.0 0.5 1.0 1.5

VSD, Body Diode Forward Voltage [V ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitances [pF]

100000

10000

1000

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

C

rss

C

iss

C

oss

C

rss

= C

gd

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

10

VDS = 15V

= 37.5V

V

8

DS

= 60V

V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

100

FDP032N08 Rev. A3

0.1 1 10
VDS, Drain-Source Voltage [V]

0

80

0 50 100 150 200

Qg, Total Ga te C harge [nC]

3

*Note: ID = 75A

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs.
vs. Temperature

1.2

1.1

Temperature

3.0

2.5

2.0

FDP032N08 N-Channel PowerTrench

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

= 0V

GS

= 10mA

D

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

GS

= 75A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

1000

100

Operation in This Area

, Drain Current [A]

D

I

is Limited by R

10

DS(on)

1

0.1
110100

10ms

DC

*Notes:

1. T

= 25oC

C

2. T

= 175oC

J

3. Single Pulse

10µs

100µs

1ms

VDS, Drain-Source Voltage [V]

250

200

150

Limited by package

100

, Drain Current [A]

D

I

50

0

25 50 75 100 125 150 175

TC, Case Temperatu re [oC]

Figure 11. Transient Thermal Response Curve

®

MOSFET

FDP032N08 Rev. A3

]

θJC

Thermal Response [Z

0.5

0.1

0.01

0.001

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

10

P

DM

t

1

t

2

*Notes:

1. Z

(t) = 0.4oC/W Max.

θJC

2. Duty Fa ct o r, D = t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

1/t2

(t)

θJC

0

10

Rectangular Pulse Duration [sec]

4

1

10

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDP032N08 N-Channel PowerTrench

®

MOSFET

FDP032N08 Rev. A3

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

DUT

I

I

SD

SD

Driver

Driver

R

R

G

G

V

V

GS

GS

+

V

V

DS

DS

_

_

L

LL

Same Type

Same Type

as DUT

as DUT

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

FDP032N08 N-Channel PowerTrench

®

V

V

DD

DD

MOSFET

V

V

GS

GS

( Driver )

( Driver )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

Gate Pulse Width

Gate Pulse Width

Gate Pulse Width

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, Body Diode Forward Current

IFM, Body Diode Forward Current

I

I

RM

RM

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode Recoverydv/dt

Body Diode Recoverydv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Voltage Drop

Forward Voltage Drop

di/dt

di/dt

10V

10V

V

V

DD

DD

FDP032N08 Rev. A3

6

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Mechanical Dimensions

0

0
5

9.90
(8.70)

±0.10

(1.70)

1.30

ø3.60

±0.20

±0.10

TO-220

±0.10

2.80

4.50

1.30

FDP032N08 N-Channel PowerTrench

±0.2

+0.1
–0.0

±0.20

9.20

±0.20

13.08

(1.46)

(1.00)

1.27

2.54TYP

[2.54

±0.20

±0.10

®

MOSFET

(3.70)(3.00)

±0.20

18.95MAX.

15.90

(45°)

1.52

±0.10

±0.30

10.08

0.80

±0.10

0.50

+0.10
–0.05

2.40

±0.20

2.54TYP

]

[2.54

±0.20

]

FDP032N08 Rev. A3

10.00

±0.20

7

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Datasheet contains the design specifications for product development. Specifications
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Rev. I35