Fairchild FDP027N08B-F102 service manual
G
S
D
TO-220
G
S
D
FDP027N08B_F102
FDP027N08B_F102 N-Channel PowerTrench
October 2011
N-Channel PowerTrench® MOSFET
80V, 223A, 2.7mΩ
Features
• R
• Low FOM R
• Low reverse recovery charge, Q
• Soft reverse recovery body diode
• Enables highly efficiency in synchronous rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
= 2.21mΩ ( Typ.) @ V
DS(on)
DS(on) *QG
= 10V, ID = 100A
GS
rr
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger and Battery Protection circuit
• DC motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
TJ, T
STG
T
L
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 892 A
Single Pulsed Avalanche Energy (Note 2) 917 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted
C
-Continuous (TC = 25oC, Silicon Limited) 223*
-Continuous (TC = 25oC, Package Limited) 120
(TC = 25oC) 246 W
- Derate above 25oC 1.64 W/oC
300
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2011 Fairchild Semiconductor Corporation
FDP027N08B_F102 Rev.C2
Thermal Resistance, Junction to Case 0.61
Thermal Resistance, Junction to Ambient 62.5
Ratings
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A-Continuous (TC = 100oC, Silicon Limited) 158*
o
C
o
C
Units
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Description Quantity
FDP027N08B FDP027N08B_F102 TO-220 F102: Trimmed Leads 50
FDP027N08B_F102 N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 80 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250µA, Referenced to 25oC - 0.05 - V/oC
VDS = 64V, V
= 0V - - 1
GS
VDS = 64V, TC = 150oC - - 500
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 - 4.5 V
Static Drain to Source On Resistance VGS = 10V, I
Forward Transconductance
VDS = 10V, ID = 100A (Note 4)
= 100A - 2.21 2.7 mΩ
D
- 227 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
(er) Engry Related Output Capacitance VDS = 40V, VGS = 0V - 3025 - pF
oss
Q
g(tot)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 1670 2220 pF
Reverse Transfer Capacitance - 35 - pF
VDS = 40V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 56 - nC
Gate Charge Threshold to Plateau - 25 - nC
Gate to Drain “Miller” Charge - 28 - nC
VDS = 40V, VGS = 10V
ID = 100A
(Note 4, 5)
ESR Equivalent Series Resistance (G-S) Drain Open, f = 1MHz - 2.4 - Ω
- 10170 13530 pF
- 137 178 nC
µA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 66 142 ns
Turn-Off Delay Time - 87 184 ns
Turn-Off Fall Time - 41 92 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 24.72A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 223* A
Maximum Pulsed Drain to Source Diode Forward Current - - 892 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 112 - nC
, Starting TJ = 25°C
DSS
VDD = 40V, ID = 100A
VGS = 10V, R
(Note 4, 5)
= 0V, I
GS
VGS = 0V, VDD = 40V, I
= 4.7Ω
GEN
= 100A - - 1.3 V
SD
= 100A
SD
dIF/dt = 100A/µs (Note 4)
- 47 104 ns
- 80 - ns
FDP027N08B_F102 Rev.C2
2
www.fairchildsemi.com
Typical Performance Characteristics
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
1
10
100
500
-55oC
175oC
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 4
5
10
100
500
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
0 100 200 300 400 500
1.0
1.5
2.0
2.5
3.0
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.3
1
10
100
500
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
175oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 30 60 90 120 150
0
2
4
6
8
10
*Note: ID = 100A
VDS = 16V
VDS = 40V
VDS = 64V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
0.1 1 10 80
10
100
1000
10000
30000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP027N08B_F102 N-Channel PowerTrench
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP027N08B_F102 Rev.C2
®
MOSFET
3
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