Fairchild FDP025N06 service manual
tm
FDP025N06
N-Channel PowerTrench® MOSFET
60V, 265A, 2.5mΩ
FDP025N06 N-Channel PowerTrench
July 2008
Features
•R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns
P
D
, T
T
J
T
L
*
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
= 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A
DS(on)
DS(on)
G
D
S
Symbol Parameter Ratings Units
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current - Continuous (TC = 25oC, Silicon Limited)
- Continuous (T
- Continuous (T
Drain Current - Pulsed (Note 1) 1060 A
Single Pulsed Avalanche Energy (Note 2) 2531 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
FDP Series
o
= 25
C unless otherwise noted
C
(T
= 25oC) 395 W
C
- Derate above 25
= 100oC, Silicon Limited)
C
= 25oC, Package Limited)
C
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
G
S
265* A
190* A
120 A
o
C2.6W/
300
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.38
Thermal Resistance, Case to Sink Typ. 0.5
Thermal Resistance, Junction to Ambient 62.5
o
®
MOSFET
o
C
o
C
o
C
C/WR
©2008 Fairchild Semiconductor Corporation
FDP025N06 Rev. A3
www.fairchildsemi.com1
FDP025N06 N-Channel PowerTrench
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP025N06 FDP025N06 TO-220 - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC= 25oC60 - -V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250µA, Referenced to 25oC - 0.04 - V/oC
D
V
DS
V
DS
= 60V, V
= 60V, V
= 0V - - 1
GS
= 0V, TC = 150oC - - 500
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 1.9 2.5 mΩ
Forward Transconductance VDS = 10V , ID = 75A (Note 4) - 200 - S
Input Capacitance
Output Capacitance - 1610 2140 pF
Reverse Transfer Capacitance - 750 1125 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 48V, ID = 75A
Gate to Source Gate Charge - 54 - nC
Gate to Drain “Miller” Charge - 50 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 11190 14885 pF
- 174 226 nC
µA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 324 658 ns
Turn-Off Delay Time - 348 706 ns
Turn-Off Fall Time - 250 510 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 265 A
Maximum Pulsed Drain to Source Diode Forward Current - - 1060 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 152 - nC
, Starting TJ = 25°C
DSS
= 30V, ID = 75A
V
DD
V
= 10V, R
GS
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs (Note 4)
F
= 25Ω
GEN
= 75A - - 1.3 V
SD
= 75A
SD
- 134 278 ns
-69-ns
FDP025N06 Rev. A3
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
700
V
= 15.0 V
GS
10.0 V
8.0 V
7.0 V
100
6.5 V
6.0 V
5.5 V
5.0 V
,Drain Current[A]
10
D
I
*Notes:
1. 250
µs Pulse Test
= 25oC
2. T
1
0.01 0.1 1
VDS,Drain-Source Voltage[V]
C
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
3.0
1000
*Notes:
= 20V
1. V
DS
µs Pulse Test
2. 250
100
,Drain Current[A]
10
D
I
1
234567
175oC
25oC
-55oC
VGS,Gate-Source Voltage[V]
500
FDP025N06 N-Channel PowerTrench
®
MOSFET
2.5
VGS = 10V
2.0
[mΩ],
DS(ON)
R
VGS = 20V
1.5
Drain-Source On-Resistance
1.0
0 100 200 300 400
*Note: TC = 25oC
ID, Drain Current [A]
100
10
, Reverse Drain Current [A]
S
I
1
0.00.20.40.60.81.01.21.4
175oC
25oC
*Notes:
1. VGS = 0V
2. 250
µs Pulse Test
VSD, Body Diode Forward Voltage [V ]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
16000
C
iss
12000
C
8000
Capacitances [pF]
4000
0
oss
C
rss
0.1 1 10
C
C
C
VDS, Drain-Source Voltage [V]
*Note:
1. V
2. f = 1MHz
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
rss
= C
gd
gd
= 0V
GS
60
10
VDS = 15V
V
= 30V
8
DS
= 48V
V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
*Note: ID = 75A
0
0 40 80 120 160 200
Qg, Total Ga te C harge [nC]
FDP025N06 Rev. A3
3
www.fairchildsemi.com
Loading...