Fairchild FDP020N06B-F102 service manual

FDP020N06B_F102

N-Channel PowerTrench

60V, 313A, 2m

®

MOSFET

FDP020N06B_F102 N-Channel PowerTrench

January 2012

Features

•R

• Low FOM R

• Low Reverse-Recovery Charge, Q

• Soft Reverse-Recovery Body Diode

• Enables High Efficiency in Synchronous Rectification

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

= 1.65m ( Typ.) at VGS = 10V, ID = 100A

DS(on)

DS(on) *QG

rr

G

S

D

TO-220

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench® process that has been tailored
to minimize the on-state resistance while maintaining superior
switching performance.

Application

• Synchronous Rectification for Server / Telecom PSU

• Battery Charger and Battery Protection Circuit

• DC Motor Drives and Uninterruptible Power Supplies

• Micro Solar Inverters

®

MOSFET

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

P

D

TJ, T

STG

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current

Drain Current Pulsed (Note 1) 1252 A

Single Pulsed Avalanche Energy (Note 2) 1859 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

Continuous (TC = 25oC, Silicon Limited) 313*

Continuous (TC = 25oC, Package Limited) 120

(TC = 25oC) 333 W

Derate above 25oC 2.2 W/oC

300

Thermal Characteristics

Symbol Parameter Rating Units

R

JC

R

JA

©2011 Fairchild Semiconductor Corporation
FDP020N06B_F102 Rev. C5

Thermal Resistance, Junction to Case 0.45

Thermal Resistance, Junction to Ambient 62.5

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o

C/W

AContinuous (TC = 100oC, Silicon Limited) 221*

o

C

o

C

Package Marking and Ordering Information

Device Marking Device Package Description Quantity

FDP020N06B FDP020N06B_F102 TO-220 F102:Trimmed Leads 50

FDP020N06B_F102 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
BV

 T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250A, VGS = 0V 60 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

ID = 250A, Referenced to 25oC - 0.03 - V/oC

VDS = 48V, V

= 0V - - 1

GS

VDS = 48V, TC = 150oC - - 500

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250A 2.5 3.3 4.5 V

Static Drain to Source On Resistance VGS = 10V, ID = 100A - 1.65 2.0 m

Forward Transconductance VDS = 10V, ID = 100A (Note 4) - 263 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss(er)

Q

g(tot)

Q

gs

Q

gs2

Q

gd

ESR Equivalent Series Resistance(G-S) Drain Open, f = 1MHZ - 0.9 - 

Input Capacitance

Output Capacitance - 3840 4992 pF

Reverse Transfer Capacitance - 127 - pF

VDS = 30V, VGS = 0V
f = 1MHz

- 16100 20930 pF

Energy Related Output Capacitance VDS = 30V, VGS = 0V - 5897 - pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 87 - nC

Gate to Threshold to Plateau - 36 - nC

Gate to Drain “Miller” Charge - 34 - nC

VDS = 30V, ID = 100A
VGS = 10V

(Note 4, 5)

- 206 268 nC

A

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 62 134 ns

Turn-Off Delay Time - 112 234 ns

Turn-Off Fall Time - 42 94 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: Starting T

100A, di/dt 200A/s, VDD BV

3: I

SD

4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

FDP020N06B_F102 Rev.C5

Maximum Continuous Drain to Source Diode Forward Current - - 313* A

Maximum Pulsed Drain to Source Diode Forward Current - - 1252 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 194 - nC

= 25°C, L = 3mH, IAS = 35.2A

J

, Starting TJ = 25°C

DSS

VDD = 30V, ID = 100A
VGS = 10V,R

(Note 4, 5)

= 0V, I

GS

VGS = 0V, VDD = 30V, I

= 4.7

GEN

= 100A - - 1.25 V

SD

= 100A

SD

dIF/dt = 100A/s (Note 4)

2

- 74 158 ns

- 106 - ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP020N06B_F102 N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP020N06B_F102 Rev.C5

3

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